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				Wing Shing Computer Components
Part No.	2SD850
OCR Text	...TYP Tmb 25 IC = 3.0A; IB = 0.8a f = 16KHz ICsat = 3.0A; f = 16KHz - MAX 1500 600 3 6 40 5 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak...
Description	Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
File Size	187.98K / 1 Page	View it Online	Download Datasheet

				ETC ANACHIP[Anachip Corp]
Part No.	AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text	... to 25oC, ID=-1mA VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS=20V ID=-4.6A, VDS=-15V, VGS=-10V VDS=-15V, ID=-1A, RG=6, VGS=-10V RD=15 VGS=0V, VDS=-15V, f=1.0MHz Min. -30 -1 Ty...
Description	P-Channel 30-V (D-S) MOSFET P-Channel Enhancement Mode Power MOSFET
File Size	245.21K / 6 Page	View it Online	Download Datasheet

				Anpec Electronics Corporation ETC[ETC] ANPEC[Anpec Electronics Coropration] http://
Part No.	APM4835 APM4835KC-TR APM4835KC-TU
OCR Text	8A, RDS(ON) = 16m(typ.) @ VGS = -10V RDS(ON) = 24m(typ.) @ VGS = -4.5V Super High Density Cell Design Reliable and Rugged SO-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D Applications * Power Management in No...
Description	P-Channel Enhancement Mode MOSFET
File Size	125.16K / 9 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	CD4043BMS CD4043BMSH CD4044BMS CD4044BMSH FN3311 CD4044
OCR Text	...3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2 3 1 2 3 +25oC, LIMITS TEMPERATURE +25oC +125 C -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +...
Description	Single 100Mbps Digital Isolator with Enable 8-SOIC -40 to 125 CMOS Quad Clocked “DLatch R/S Latches, Tri-State, Quad, Rad-Hard, CMOS, Logic CMOS Quad Clocked “D” Latch From old datasheet system CMOS Quad 3 State R/S Latches CMOS Quad Clocked D Latch CMOS Quad Clocked “D Latch
File Size	108.99K / 10 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
Part No.	HE8050
OCR Text	...mA IE=100uA VCB=35V VEB=6V IC=0.8a, IB=80mA IC=0.8a, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA MHz *Pulse Test : Pulse Width 380us, Duty Cycle2% Classification on hFE2 Rank Range HE...
Description	NPN EPITAXIAL PLANAR TRANSISTOR
File Size	35.35K / 3 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110E6
OCR Text	...AS Supply Voltage (V) Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage 250 250 200 Shutdown Delay Time Shutdown Delay time 200 Max. 150 Max. 150 Typ. 100 Typ. 100 50 5...
Description	HIGH AND LOW SIDE DRIVER
File Size	306.76K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L6
OCR Text	...AS Supply Voltage (V) Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage 250 250 200 Shutdown Delay Time (ns) Shutdown Delay time (ns) 200 Max. 150 Max. 150 Typ. 100 Typ. 100 ...
Description	HIGH AND LOW SIDE DRIVER
File Size	337.18K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L
OCR Text	...AS Supply Voltage (V) Figure 8A. Turn-Off Time vs. Temperature Figure 8B. Turn-Off Time vs. Voltage 250 250 200 Shutdown Delay Time (ns) Shutdown Delay time (ns) 200 Max. 150 Max. 150 Typ. 100 Typ. 100 ...
Description	HIGH AND LOW SIDE DRIVER
File Size	131.31K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text	...D Supply Voltage 250 Figure 8A. Turn-Off Time vs. Temperature 250 200 200 Max. Turn-Off Delay Time (ns) Turn-Off Delay Time (ns) Max. 150 Typ. 150 100 50 0 100 Typ 50 0 10 12 14 16 18 20 0 2 4 ...
Description	HIGH AND LOW SIDE DRIVER
File Size	218.79K / 16 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...VGS = 0 , Tcase = 100C) 13.9A 8.8a 56A 75W 0.6W/C 450mJ 5.0V/ns -55 to 150C 300C 1.67C/W 4C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

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