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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	M29W400 M29W400B M29W400B-100M1R M29W400B-100M1TR M29W400B-100M5R M29W400B-100M5TR M29W400B-100M6R M29W400B-100M6TR M29W400B-100N1R M29W400B-100N1TR M29W400B-100N5R M29W400B-100N5TR M29W400B-100N6R M29W400B-100N6TR M29W400B-100ZA1R M29W400B-100ZA1TR M29W400B-100ZA5R M29W400B-100ZA5TR M29W400B-100ZA6R M29W400B-100ZA6TR M29W400B-120M1R M29W400B-120M1TR M29W400B-120M5R M29W400B-120M5TR M29W400B-120M6R M29W400B-120M6TR M29W400B-120N1R M29W400B-120N1TR M29W400B-120N5R M29W400B-120N5TR M29W400B-120N6R M29W400B-120N6TR M29W400B-120ZA1R M29W400B-120ZA1TR M29W400B-120ZA5R M29W400B-120ZA5TR M29W400B-120ZA6R M29W400B-120ZA6TR M29W400B-150M1R M29W400B-150M1TR M29W400B-150M5R M29W400B-150M5TR M29W400B-150M6R M29W400B-150M6TR M29W400B-150N1R M29W400B-150N1TR M29W400B-150N5R M29W400B-150N5TR M29W400B-150N6R M29W400B-150N6TR M29W400B-150ZA1R M29W400B-150ZA1TR M29W400B-150ZA5R M29W400B-150ZA5TR M29W400B-150ZA6R M29W400B-150ZA6TR M29W400B-90M1R M29W400B-90M1TR M29W400B-90M5R M29W400B-90M5TR M29W400B-90M6R M29W400B-90M6TR M29W400B-90N1R M29W400B-90N1TR M29W400B-90N5R M29W400B-90N5TR M29W400B-90N6R M29W400B-90N6TR M29W400B-90ZA1R M29W400B-90ZA1TR M29W400B-90ZA5R M29W400B-90ZA5TR M29W400B-90ZA6R M29W40
OCR Text	x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively b...512k x8 or 256K x16 bits selectable by the BYTE signal. When BYTE is Low the Byte-wide x8 organisati...
Description	4 Mbit 512kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory 4 Mbit 512kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
File Size	243.63K / 34 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4020 BS616LV4020AC BS616LV4020AI BS616LV4020BC BS616LV4020BI BS616LV4020DC BS616LV4020DI
OCR Text	... OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4020 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable
File Size	215.30K / 12 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV4021DC BS616LV4021DI
OCR Text	... OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4021 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by ...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable
File Size	222.10K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
OCR Text	... OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4023 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144words by 16 bits or 524,288 bytes by 8 bits selectable by ...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable
File Size	217.16K / 11 Page	View it Online	Download Datasheet

				BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
Part No.	BS616LV4025 BS616LV4025BC BS616LV4025BI BS616LV4025DC BS616LV4025DI
OCR Text	... OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV4025 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable by...
Description	Very Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable 非常低功电压CMOS SRAM56K × 1612K × 8位开 LM5009 150 mA, 100V Step-Down Switching Regulator; Package: MINI SOIC; No of Pins: 8
File Size	187.58K / 11 Page	View it Online	Download Datasheet

				BSI[Brilliance Semiconductor]
Part No.	BS616UV4020 BS616UV4020BC BS616UV4020BI BS616UV4020DC BS616UV4020DI
OCR Text	... OE options * I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616UV4020 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits or 524,288 bytes by 8 bits selectable b...
Description	Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512k x 8 bit switchable
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH28F800BVHE-BTL90 LHF80V13
OCR Text	x8/512k x 16) (Model No.: LHF80V13) Flash Memory Spec No.: EL109049A Issue Date: December 1, 1998 SHARP LHFSOV13 l Handle this document carefully for it contains material protected by international copyright law. Any reproduction...
Description	Flash Memory 8M (1M 】8/512k x 16) Flash Memory 8M (1M 8/512k x 16)
File Size	2,605.46K / 42 Page	View it Online	Download Datasheet

				Eon Silicon Solution Inc. ETC
Part No.	EN29LV800T70RS EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T70RSP EN29LV800T70RT EN29LV800T70RTI EN29LV800T70RTIP EN29LV800T70RTP EN29LV800B70RSP EN29LV800B70RTP EN29LV800B90S EN29LV800B90SP EN29LV800B90TI EN29LV800B90TP EN29LV800
OCR Text	... A15 A14 A13 A12 (x8) FC000h-FFFFFh FA000h-FBFFFh F8000h-F9FFFh F0000h - F7FFFh E0000h - EFFFFh D0000h - DFFFFh C0000h - CFFFFh B0000h - BFFFFh A0000h - AFFFFh 90000h - 9FFFFh 80000h - 8FFFFh 70000h - 7FFFFh 60000h - 6FFFFh 5...
Description	8 Megabit (1024K x 8-bit / 512k x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
File Size	237.36K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D K6R4004C1D-JC K6R4004V1D K6R4004V1D-JKCI K6R4008C1D K6R4008C1D-JC K6R4008V1D-JC K6R4016V1D K6R4008V1D
OCR Text	...K6R4008C1D-J(K,T,U)C(I) 10 512k x8 K6R4008V1D-J(K,T,U)C(I) 08/10 K6R4016C1D-J(K,T,U,E)C(I) 10 256K x16 K6R4016V1D-J(K,T,U,E)C(I,L,P) 08/10 3.3 5 3.3 8/10 10 8/10 3.3 5 8/10 10 Part Number K6R4004C1D-J(K)C(I) 10 VDD(V) 5 Speed ( ns ) 10 PKG ...
Description	1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运 1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运 861 SOLID STATE RELAYS RoHS Compliant: Yes
File Size	216.37K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R4016V1 K6R4016V1D K64004C1D
OCR Text	... 10 K6R4004V1D-JC(I) 08/10 512k x8 K6R4008C1D-J(T)C(I) 10 K6R4008V1D-J(T)C(I) 08/10 256K x16 K6R4016C1D-J(T,E)C(I) 10 K6R4016V1D-J(T,E)C(I,L,P) 08/10 VDD(V) 5 3.3 5 3.3 5 3.3 Speed ( ns ) 10 8/10 10 8/10 10 8/10 J : 36-SOJ T : 44-TSOP2 J :...
Description	1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
File Size	175.72K / 9 Page	View it Online	Download Datasheet

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