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List of Unclassifed Manufac...
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| Part No. |
PCC-SMP-K
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| OCR Text |
....6 (0.34) 1.6 (0.06) * optional transistor retainer clip. for clip, add suffx -r to model number for additional cost. dimensions: mm (in) to order visit newportus.com/pcc for pricing and details model no. mating connector pcc-ost-(*)-... |
| Description |
Circuit Board Thermocouple Connectors
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| File Size |
407.25K /
1 Page |
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New Jersey Semi-Conductor P...
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| Part No. |
BLF147
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| OCR Text |
...x: (973) 376-8960 vhp power mos transistor blf147 features ? high power gain ? low intermodulation distortion ? easy power control ? good thermal stability ? withstands full load mismatch. description silicon n-channel enhancement mode vert... |
| Description |
VHP power MOS transistor
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| File Size |
143.74K /
4 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF392
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| OCR Text |
Transistor
Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Ty... |
| Description |
Tthe RF Line NPN Silicon Push-Pull RF Power Transistor
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| File Size |
161.31K /
4 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK3014
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| OCR Text |
...etermine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching ... |
| Description |
H-BRIDGE MOSFET POWER MODULE
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| File Size |
224.46K /
5 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK3018
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| OCR Text |
...etermine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching ... |
| Description |
THREE PHASE BRIDGE MOSFET POWER MODULE
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| File Size |
223.44K /
5 Page |
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it Online |
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MA-Com MACOM[Tyco Electronics]
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| Part No. |
MRF166W
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| OCR Text |
Transistor
N-Channel Enhancement-Mode MOSFET
* Push-Pull Configuration Reduces Even Numbered Harmonics * Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 40 Watts Gain = 14 dB Efficiency = 50% * Typical Performance at 175 MHz, 28 ... |
| Description |
40 W, 500 MHz, TMOS broadband RF power FET
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| File Size |
204.67K /
10 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK3020
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| OCR Text |
...etermine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching n... |
| Description |
H-BRIDGE MOSFET POWER MODULE
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| File Size |
236.25K /
6 Page |
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it Online |
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MSK[M.S. Kennedy Corporation]
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| Part No. |
MSK645B MSK645
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| OCR Text |
...cted to the base of the cascode transistor in the equivalent schematic. The purpose of the cascode transistor is to isolate the input transistor from the high voltage supply. The input transistor must have a very high transition frequency s... |
| Description |
HIGH PERFORMANCE, HIGH VOLTAGE VIDEO DISPLAY DRIVER
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| File Size |
215.24K /
6 Page |
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it Online |
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