tp-39 pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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tp-39 Datasheet PDF File

For tp-39 Found Datasheets File :: 6215 Search Time::1.812ms
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				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...E R RG 20V D .U .T IA S tp 300 + - VD D A 0 .0 1 200 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp ...39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...600 RG 20V D .U .T IA S tp + - VD D A 0 .0 1 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 200 ...39 (.055) 1 .14 (.045) M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE ...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	... S + V - DD A 10V 20V tp 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 12c. Maximum Avalanche ...39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	... 200 15V V (B R )D S S tp VD S L DRIVER 100 RG 20 V D.U .T IA S + - VD D 0 25 50 75 100 125 150 175 A IAS ...39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...ER RG 20V VGS D.U.T IAS tp + V - DD A 0.01 50 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain ...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... R 0 .0 1 VD D A -2 0 V tp 400 300 15V 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 V D D = -2 5V 25...39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...-6.6 A -11 A -1 6A -2 0 V tp 15V Fig 12a. Unclamped Inductive Test Circuit IAS tp V (BR)DSS Fig 12b. Unclamped Inductive ...39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...ed inductive load, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN. MAX. 150 UNI...39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 ...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N T RO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S ...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...S L D R IV E R RG 20V tp D .U .T IA S + V - DD A 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS ...39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

For tp-39 Found Datasheets File :: 6215 Search Time::1.812ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |