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  tc654 tc655 pwm fan speed cont Datasheet PDF File

For tc654 tc655 pwm fan speed cont Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IRFY430M-T257

TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
Part No. IRFY430M-T257
Description Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

File Size 19.79K  /  2 Page

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    IRF054SMD

SemeLAB
Seme LAB
International Rectifier
http://
Part No. IRF054SMD
Description N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))

File Size 22.26K  /  2 Page

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    IRFN140SMD

TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
Part No. IRFN140SMD
Description ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))

File Size 22.23K  /  2 Page

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    IRFE230 2N6798U

NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
Part No. IRFE230 2N6798U
Description N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续).8A时,RDS(上):0.46Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续).8A时,RDS(对):0.46Ω))
N-Channel N沟道

File Size 16.94K  /  2 Page

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    IRFE9130

Seme LAB
Part No. IRFE9130
Description P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET(减振钢板基本:- 100V的,身份证(续) 6.1A,Vdgr 0.345V)性(P沟道功率马鞍山场效应管(减振钢板基本 100V的,身份证(续) 6.1AVdgr 0.345V))

File Size 16.50K  /  2 Page

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    IRF9530S IRF9530SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9530S IRF9530SMD
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 22.38K  /  2 Page

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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    SemeLAB
SEME-LAB[Seme LAB]
Part No. SML100W18
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))

File Size 25.75K  /  2 Page

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    Fastenal
Part No. B1821BH075C300N B1821BH075C275N B1821BH038C275N B1821BH050C600N B1821BH050C325N B1821BH038C138N B1821BH038C113N B1821BH038C100N B1821BH038C050N B1821BH044C100N B1821BH075C400N B1821BH050C125N B1821BH063C325N B1821BH063C125N B1821BH075C500N B1821BH044C375N B1821BH044C250N B1821BH050C375N B1821BH044C175N B1821BH044C150N B1821BH044C275N B1821BH050C275N B1821BH044C125N
Description Cap Screws cont

File Size 139.15K  /  1 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost control
Part No. IRF240SMD
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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