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  rf power module silicon mos fe Datasheet PDF File

For rf power module silicon mos fe Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MP4513

TOSHIBA[Toshiba Semiconductor]
Part No. MP4513
Description power Transistor module silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA power Transistor module silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)

File Size 135.90K  /  6 Page

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    GBPC25005W GBPC2501 GBPC2510 GBPC2510W GBPC25005 GBPC2501W GBPC2502 GBPC2502W GBPC2504 GBPC2504W GBPC2506 GBPC2506W GBPC

DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
Part No. GBPC25005W GBPC2501 GBPC2510 GBPC2510W GBPC25005 GBPC2501W GBPC2502 GBPC2502W GBPC2504 GBPC2504W GBPC2506 GBPC2506W GBPC2508 GBPC2508W
Description Dual General-Purpose Operational Amplifier 8-SOIC 0 to 70
25A GLASS PASSIVATED BRIDGE RECTIFIER
8 A, 5-V Input Non-Isolated Wide-Output Adjust SIP module w/Auto-Track 8-SIP module -40 to 85 25 A, 200 V, silicon, BRIDGE RECTIFIER DIODE
50-A, 8-V to 14-V Input, Non-Isolated, Wide-Output Adjust, Vertical power module 21-DIP module -40 to 85 25 A, 400 V, silicon, BRIDGE RECTIFIER DIODE
Isolated Flyback Switching Regulator with 9V Output 25 A, 100 V, silicon, BRIDGE RECTIFIER DIODE

File Size 69.87K  /  2 Page

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    MP4304

Toshiba Semiconductor
Toshiba Corporation
Part No. MP4304
Description power Transistor module silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA power Transistor module silicon NPN Epitaxial Type (high gain power transistor 4 in 1)

File Size 131.59K  /  6 Page

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    MG400J2YS60A

Toshiba Semiconductor
Part No. MG400J2YS60A
Description GTR module silicon N Channel IGBT High power Switching Applications Motor Control Applications
TOSHIBA IGBT module silicon N Channel IGBT
From old datasheet system

File Size 183.91K  /  9 Page

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    MG600Q1US61

Toshiba Semiconductor
Part No. MG600Q1US61
Description TOSHIBA IGBT module silicon N Channel IGBT
GTR module silicon N Channel IGBT High power Switching Applications Motor Control Applications

File Size 229.92K  /  8 Page

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    MG150J7KS60

Toshiba Semiconductor
Part No. MG150J7KS60
Description GTR module silicon N Channel IGBT High power Switching Applications Motor Control Applications
TOSHIBA GTR module silicon N CHANNEL IGBT

File Size 292.47K  /  5 Page

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    PM50502C

Hitachi Semiconductor
Part No. PM50502C
Description silicon N-CHANNEL power mos feT module HIGH SPEED power SWITCHING

File Size 276.11K  /  5 Page

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    WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M32-120G4DM5 WF8M32-100G4DI5 WF8M32-100G4DC5 WF8M32-120G4DC5

Glenair, Inc.
White Electronic Designs Corporation
Part No. WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M32-120G4DM5 WF8M32-100G4DI5 WF8M32-100G4DC5 WF8M32-120G4DC5
Description 100ns; 5V power supply; 8M x 32 flash module
120ns; 5V power supply; 8M x 32 flash module
150ns; 5V power supply; 8M x 32 flash module
8M X 32 FLASH 5V PROM module, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68
8Mx32 5V Flash module(8Mx32 5V闪速存储器模块)
Flash MCP

File Size 123.11K  /  10 Page

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    1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A 1N1192 1N1194 1N1438 1N2024 1N1195A 1N1436 1N1197 1N1197A 1N2794 1N13

MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
Part No. 1N1301 1N2283 1N4526 1N1196A 1N1196 1N2021 1N1192A 1N1192 1N1194 1N1438 1N2024 1N1195A 1N1436 1N1197 1N1197A 1N2794 1N1302 1N1304 1N1306 1N1194A 1N2798 1N2281 1N2282 1N2284 1N2285 1N2286 1N2287 1N2288 S30480 1N1191 1N1191A 1N1193 1N1193A 1N1195 1N1198 1N1198A 1N1434 1N1435 1N1437 1N2022 1N2023 1N2025 1N2154 1N2155 1N2156 1N2157 1N2158 1N2159 1N2160 1N2272 1N2273 1N2274 1N2275 1N2276 1N2277 1N2278 1N2279 1N2280 1N248A 1N248B 1N248C 1N249A 1N249B 1N249C 1N250 1N250A 1N250B 1N250C 1N2786 1N2787 1N2793 1N2795 1N2796 1N2797 1N2799 1N2800 1N3208 1N3209 1N3210 1N3212 1N3213 1N3214 1N4527 1N4528 1N4529 S304100 S304120 S30420 S30440 S30460 1N4525 1N3211 1N3211R 1N3214R 1N248 1N2283R 1N2287R 1N2282R 1N2286R
Description Standard Rectifier (trr more than 500ns)
(1N2xxx) silicon power RECTIFIER
silicon power RECTIFIER 40 A, 200 V, silicon, RECTIFIER DIODE, DO-203AB
(1N4525 - 1N4529) silicon power RECTIFIER
silicon power RECTIFIER 40 A, 100 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power RECTIFIER 40 A, 50 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power RECTIFIER 40 A, 350 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power RECTIFIER 40 A, 300 V, silicon, RECTIFIER DIODE, DO-203AB
silicon power RECTIFIER 40 A, 400 V, silicon, RECTIFIER DIODE, DO-203AB
   silicon power RECTIFIER

File Size 157.88K  /  3 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M67799SHA
Description rf power module silicon mos feT power AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO

File Size 30.66K  /  2 Page

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