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For resistivity Found Datasheets File :: 891    Search Time::2.39ms    
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    174638 174645 177530 177531 178386 178347 178038 178039 178041 178040 1123747 1123745 1123746 343580 175543

Tyco Electronics
Part No. 174638 174645 177530 177531 178386 178347 178038 178039 178041 178040 1123747 1123745 1123746 343580 175543
OCR Text ...l-std-202?]m 108 c 3.5.7 heat resistivity termination resistance (low level)(final) 20 m max. subject mated connectors to heat resistivity at 852 c for 500 hours,per mil-std-202,method 108, condition c 3.5.8 n t?? `? 20...
Description This specification covers the requirements for product performance
   This specification covers the requirements for product performance

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    700-SKOC1Z25 700-SKOC2Z25 700-N40 700-N41 700-SKON2Z25 700-SKICA18 700-SKICZ24 199-DR1 700-SKOZ2Z25 700-HN121

Allen-Bradley
Part No. 700-SKOC1Z25 700-SKOC2Z25 700-N40 700-N41 700-SKON2Z25 700-SKICA18 700-SKICZ24 199-DR1 700-SKOZ2Z25 700-HN121
OCR Text ...%. Refer to the "Inrush Current resistivity" graphs on page 61 for more details. Refer to "Load Current Versus Ambient Temperature Characteristics" graphs on page 61 for additional details. 60 Bulletin 700-SK Solid-State Relays S...
Description Solid-State Relays
   Solid-State Relays

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    List of Unclassifed Man...
Part No. CCH-18-101-0200
OCR Text ...cck ccd cad cft initial surface resistivity (sr) (milliohms)* cho-tp-57*** <2 <2 <2 <2 n/a n/a <100 initial through resistivity (tr) (milliohms)* cho-tp-57*** <3 <3 <35 <2 <15**** <100**** <100 initial peel strength in oz./inch [ppi] (n/m) ...
Description CHO-FOIL? & CHO-FABTM Shielding Tapes

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    700-SFNY3Z25 700-HN114B 700-SFTY3Z24 700-SFZY3Z25 700-HN116

Allen-Bradley
Part No. 700-SFNY3Z25 700-HN114B 700-SFTY3Z24 700-SFZY3Z25 700-HN116
OCR Text ...%. Refer to the "Inrush Current resistivity" graphs on page 50 for more details. Refer to "Load Current vs. Ambient Temperature Characteristics" on page 50 for additional load current details. 49 Bulletin 700-SF Solid-State Relays ...
Description Solid-State Relays

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
OCR Text ...cropipe u = ultra-low micropipe resistivity code (see appropriate specification sheet) 0 = on-axis 3 = 3.5 off-axis 4 = 4.0 off-axis 8 = 8.0 off-axis d = 50.8mm (2.0") e = 76.2mm (3.0") p = production grade r = research grade n = n-type p =...
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

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    ACASN1100A2200P1AT ACASN1100A2200P5AT ACASN1100B2200P1AT ACASN1100B2200P5AT ACASN1100E2200P1AT ACASN1100E2200P5AT ACASN1

Vishay Siliconix
Part No. ACASN1100A2200P1AT ACASN1100A2200P5AT ACASN1100B2200P1AT ACASN1100B2200P5AT ACASN1100E2200P1AT ACASN1100E2200P5AT ACASN1100F2200P1AT ACASN1100F2200P5AT ACASN1100J2200P1AT ACASN1100J2200P5AT ACASN1100K2200P1AT ACASN1100K2200P5AT ACASN1100N2200P1AT ACASA1100A2200P1AT ACASA1100A2200P5AT ACASA1100B2200P1AT ACASA1100B2200P5AT ACASA1100E2200P1AT ACASA1100E2200P5AT ACASA1100F2200P1AT ACASA1100F2200P5AT ACASA1100J2200P1AT ACASA1100J2200P5AT ACASA1100K2200P1AT ACASA1100K2200P5AT ACASA1100N2200P1AT ACASA1100N2200P5AT ACASA1100P2200P1AT ACASA1100P2200P5AT ACASN1100P2200P1AT ACASN1100P2200P5AT ACAS0606 ACASN1100N2200P5AT ACAS0612AT
OCR Text resistivity FEATURES * Superior moisture resistivity, |R/R| < 0.5 % (85 C; 85 % RH; 1000 h) * Rated dissipation P70 up to 125 mW per resistor * ESD capability 1000 V, human body model * TCR tracking down to 10 ppm/K ( 5 ppm/K) and toleran...
Description Precision Thin Film Chip Resistor Array Superior Moisture resistivity

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    MOTOROLA[Motorola, Inc]
Part No. AN211A
OCR Text ... Figure 1, is of relatively low resistivity material to maximize gain. For the same purpose, Gate 1 is of very low resistivity material, allowing the depletion region to spread mostly into the n-type channel. In most cases the gates are int...
Description FIFELD EFFECT TRANSISTORS IN THEORY AND PRACTICE

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    700-HT2 700-SAZY5Z25 700-SANY3Z25 700-HN202 700-HN100 700-HN125 700-HN108 700-HN158

Allen-Bradley
Part No. 700-HT2 700-SAZY5Z25 700-SANY3Z25 700-HN202 700-HN100 700-HN125 700-HN108 700-HN158
OCR Text ...y 50%. Refer to "Inrush Current resistivity" graphs below. Refer to the following graph "Load Current Vs. Ambient Temperature Characteristics" for additional load current details. Load Current vs. Ambient Temperature Characteristics 70...
Description Solid-State Relays

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    AGILENT
Part No. 16008B
OCR Text resistivity Cell Data Sheet Product Specifications Measurement Instrument: Agilent 4339A/B Only Frequency: DC Maximum Voltage: 1000V Maximum Current: 10mA Resistance Measurement Range: Volume resistivity Measurement Range: up to 4.0E+1...
Description 16008B resistivity Cell

File Size 53.03K  /  2 Page

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