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				MICRON[Micron Technology]
Part No.	MT48LC8M16A2 MT48LC8M16A2TG-6A
OCR Text	...URRENT AUTO PRECHARGE, and Auto refresh Modes * Self refresh Mode; standard and low power * LVTTL-compatible inputs and outputs * Single +3....4k 4k (A0-A11) 4 (BA0, BA1) 512 (A0-A8) OPTION * Configuration 8 Meg x 16 (2 Meg x 16 x 4 banks)...
Description	SYNCHRONOUS DRAM
File Size	37.23K / 4 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4k Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-R...
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4k refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4k refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4k Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
File Size	223.25K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4k Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description	1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4k refresh cycle. 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
File Size	525.70K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text	...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx1...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
File Size	826.10K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text	...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fa...
Description	4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
File Size	898.34K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text	...mory cells within the same row. refresh cycle(4k Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO...
Description	4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns
File Size	943.13K / 36 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT4LC16M4A7 MT4LC16M4A7DJ-5 MT4LC16M4A7DJ-5S MT4LC16M4A7DJ-6 MT4LC16M4A7DJ-6S MT4LC16M4A7TG-5 MT4LC16M4A7TG-5S MT4LC16M4A7TG-6 MT4LC16M4A7TG-6S MT4LC16M4T8DJ-5 MT4LC16M4T8DJ-5S MT4LC16M4T8DJ-6 MT4LC16M4T8DJ-6S MT4LC16M4T8TG-5 MT4LC16M4T8TG-5S MT4LC16M4T8TG-6 MT4LC16M4T8TG-6S
OCR Text	...96-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms * Optional self refresh (S) for low-power data retention MT4LC16M4A7, MT4...4k) rows 8,192 (8K) rows * Plastic Packages 32-pin SOJ (400 mil) 32-pin TSOP (400 mil) * Timing 50ns...
Description	DRAM
File Size	338.82K / 20 Page	View it Online	Download Datasheet

				MICRON[Micron Technology]
Part No.	MT4LC16M4G3 MT4LC16M4G3DJ-5 MT4LC16M4G3DJ-5S MT4LC16M4G3DJ-6 MT4LC16M4G3DJ-6S MT4LC16M4G3TG-5 MT4LC16M4G3TG-5S MT4LC16M4G3TG-6 MT4LC16M4G3TG-6S MT4LC16M4H9DJ-5 MT4LC16M4H9DJ-5S MT4LC16M4H9DJ-6 MT4LC16M4H9DJ-6S MT4LC16M4H9TG-5 MT4LC16M4H9TG-5S MT4LC16M4H9TG-6 MT4LC16M4H9TG-6S
OCR Text	...AGE MODE access * Optional self refresh (S) for low-power data retention * 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64m...4k) rows 8,192 (8K) rows * Plastic Packages 32-pin SOJ (400 mil) 32-pin TSOP (400 mil) * Timing 50ns...
Description	DRAM
File Size	373.17K / 22 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...ion DQM for masking Auto & self refresh 64ms refresh period (4k cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S280832A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8 bits, fabricated wi...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

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