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rdramtm Datasheet PDF File

For rdramtm Found Datasheets File :: 33 Search Time::0.859ms
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					http:// NEC[NEC] NEC Corp. Performance Semiconductor, Corp.
Part No.	MC-4R256CPE6C-845 MC-4R256CPE6C MC-4R256CPE6C-653 MC-4R256CPE6C-745
OCR Text	...128M Direct Rambus DRAM (Direct rdramtm) devices (PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates whil...
Description	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
File Size	130.19K / 16 Page	View it Online	Download Datasheet

					http:// NEC[NEC] NEC Corp. NEC, Corp.
Part No.	MC-4R64CEE6C-845 MC-4R64CEE6C-745 MC-4R64CEE6C-653 MC-4R64CEE6C MC-4R64CEE6B-845 MC-4R64CEE6B-745 MC-4R64CEE6B-653 MC-4R64CEE6B
OCR Text	...128M Direct Rambus DRAM (Direct rdramtm) devices (PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates whil...
Description	Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0-20 mA; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT 直接Rambus的内存RIMM400模块技2M的字x 16 Process/Temperature Controller; Control Operation:Auto/Manual, Ramp/Soak, Stand By, Valve Positioning; Control Output Current:0.75 A; Control Output Relay Rating:264 VAC / 2 A; Control Type:On/Off, PID RoHS Compliant: NA 直接Rambus的内存RIMM400模块技2M的字x 16 32M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
File Size	123.98K / 16 Page	View it Online	Download Datasheet

					http:// NEC[NEC] NEC Corp. NEC, Corp.
Part No.	MC-4R64CPE6C-845 MC-4R64CPE6C MC-4R64CPE6C-653 MC-4R64CPE6C-745
OCR Text	...128M Direct Rambus DRAM (Direct rdramtm) devices (PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates whil...
Description	DRAGONBALL MXL DIE SALE Direct Rambus DRAM RIMM Module 64M-BYTE 32M-WORD x 16-BIT 直接Rambus的内存RIMM400模块技2M的字x 16
File Size	127.75K / 16 Page	View it Online	Download Datasheet

					http:// NEC[NEC] NEC Corp.
Part No.	MC-4R96CEE6C-845 MC-4R96CEE6B MC-4R96CEE6B-653 MC-4R96CEE6B-745 MC-4R96CEE6B-845 MC-4R96CEE6C MC-4R96CEE6C-653 MC-4R96CEE6C-745
OCR Text	...128M Direct Rambus DRAM (Direct rdramtm) devices (PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates whil...
Description	Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT
File Size	125.43K / 16 Page	View it Online	Download Datasheet

					http:// NEC[NEC] NEC Corp. NEC, Corp.
Part No.	MC-4R96CPE6C-845 MC-4R96CPE6C MC-4R96CPE6C-653 MC-4R96CPE6C-745 NECCORP.-MC-4R96CPE6C-745
OCR Text	...128M Direct Rambus DRAM (Direct rdramtm) devices (PD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates whil...
Description	Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模9600 RIMM的技800字16 Direct Rambus DRAM RIMM Module 96M-BYTE 48M-WORD x 16-BIT 直接Rambus的内存模600 RIMM的技800字16
File Size	129.01K / 16 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R881869D K4R571669D
OCR Text	rdramtm 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct rdramtm Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D/K4R881869D Change History Direct rdramtm Version 1.4( July 2002) - First Copy...
Description	256/288Mbit RDRAM(D-die)
File Size	309.27K / 20 Page	View it Online	Download Datasheet

					SAMSUNG[Samsung semiconductor]
Part No.	K4R271669F
OCR Text	rdramtm 128Mbit RDRAM(F-die) 256K x 16 bit x 32s Banks Direct rdramtm Version 1.41 January 2004 Page -1 Version 1.41 Jan. 2004 K4R271669F Change History Version 1.4 ( September 2003 ) Direct rdramtm - First Copy ( Ve...
Description	128Mbit RDRAM(F-die)
File Size	289.35K / 20 Page	View it Online	Download Datasheet

					Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
OCR Text	rdramtm 128/144Mbit RDRAM(B-die) 256K x 16/18 bit x 32s banks Direct rdramtm Version 1.11 October 2000 Page -1 Version 1.11 Oct. 2000 K4R271669B/K4R441869B Change History Version 1.11 ( October 2000) - Preliminary * Based...
Description	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct rdramtm 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
File Size	304.91K / 20 Page	View it Online	Download Datasheet

					INFINEON[Infineon Technologies AG]
Part No.	HYR183240G-845 HYR183240G-840 HYR183240G-745 HYR183240G-653 HYR186440G-845 HYR1612840G-653 HYR1612840G-745 HYR1612840G-840 HYR1612840G-845 HYR1625640G-653 HYR1625640G-745 HYR1625640G-840 HYR1625640G-845 HYR163240G HYR163240G-653 HYR163240G-745 HYR163240G-840 HYR163240G-845 HYR166440G-653 HYR166440G-745 HYR166440G-840 HYR166440G-845 HYR1812840G-653 HYR1812840G-745 HYR1812840G-840 HYR1812840G-845 HYR1825640G-653 HYR1825640G-745 HYR1825640G-840 HYR1825640G-845 HYR186440G-653 HYR186440G-745 HYR186440G-840
OCR Text	...Mbit Direct Rambus DRAM (Direct rdramtm) devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while using conventi...
Description	RDRAMModules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued RDRAMModules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued RDRAMModules - 512MB RIMM Module (256Mx18) PC600-53 Discontinued RDRAMModules - 256MB RIMM Module (128Mx18) PC600-53 Discontinued RDRAMModules - 128MB RIMM Module (64Mx16) PC600-53 Discontinued RDRAMModules - 128MB RIMM Module (64Mx18) PC600-53 Discontinued RDRAMModules - 256MB RIMM Module (128Mx16) PC600-53 Discontinued RDRAM?Modules - 128MB RIMM Module (64Mx18) PC800-45 Discontinued 128 MB (64M x 18) PC800-40 ECC RIMM M... RDRAM?Modules - 512MB RIMM Module (256Mx18) PC800-45 Discontinued 512 MB (256 Mx 18) PC800-40 ECC RIMM ... RDRAM?Modules - 256MB RIMM Module (128Mx18) PC800-45 Discontinued 256 MB (128M x 18) PC800-40 ECC RIMM ... RDRAM?Modules - 128MB RIMM Module (64Mx16) PC800-45 Discontinued 128 MB (64M x 16) PC800-40 RIMM Module RDRAM?Modules - 64MB RIMM Module (32Mx16) PC800-45 Discontinued RDRAM?Modules - 256MB RIMM Module (128Mx16) PC800-45 Discontinued 256 MB (128M x 16) PC800-40 RIMM Module Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) 直接的RDRAM RIMM的模块（88兆RDRAMs
File Size	384.67K / 14 Page	View it Online	Download Datasheet

					OKI electronic componets
Part No.	MSM5718B70
OCR Text	... The 18-Megabit RambusTM DRAM (rdramtm) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) te...
Description	18-Megabit RDRAM (2M x 9)
File Size	256.97K / 40 Page	View it Online	Download Datasheet

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