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Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
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| Part No. |
AN537
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| OCR Text |
...field potential relative to the polysilicon floating gate. When 20V is applied to the polysilicon memory cell gate and 0V is applied to the bit line drain (column), electrons tunnel from the substrate through the 90-angstrom Tunnel Dielectr... |
| Description |
Everything a System Engineer Needs to Know About Serial EEPROM Endurance 一切系统工程师需要了解串行EEPROM耐力
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| File Size |
144.35K /
9 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1387
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| OCR Text |
... enhancement-mode transistor, * polysilicon resistors, * polysilicon diodes. The signal MOSFET transistors are implanted in the p-type mesh, while the polysilicon resistors and
3/10
AN1387 - APPLICATION NOTE diodes are insulated from t... |
| Description |
APPLICATION OF A NEW MONOLITHIC SMART IGBT IN DC MOTOR CONTROL FOR HOME APPLIANCES
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| File Size |
323.53K /
10 Page |
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it Online |
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Vishay
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| Part No. |
AN820
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| OCR Text |
...The forward voltage drop of the polysilicon diode is inversely proportional to its own junction temperature and by extension to the junction temperature of the MOSFET. Quantifying this, the temperature coefficient of the forward voltage dro... |
| Description |
Temperature Sensing MOSFET
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| File Size |
48.18K /
6 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1062
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| OCR Text |
...IC XIC ST's Hi-Endurance Single polysilicon CMOS technology which ST's Hi-Endurance Single polysilicon CMOS technology Low density Fabrication Technology 1.2 m 1.2 m 1.0 m 0.6 m 0.6 m 0.6 m High density 0.6 m 0.6 m
guarantees an enduranc... |
| Description |
CHANGING FROM THE ST14XXX TO THE M14XXX I2C EEPROM MEMORY CARD PRODUCTS IN YOUR APPLICATION
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| File Size |
70.02K /
7 Page |
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it Online |
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ST Microelectronics
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| Part No. |
SD1891-03
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| OCR Text |
...olts . gold metallized system . polysilicon site ballasting . overlay die geometry . high reliability and ruggedness . p out = 5.0 w min. with 14.0 db gain description the sd1891-03 is a 28 v silicon npn transistor designed for inmarsat and... |
| Description |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
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| File Size |
243.46K /
5 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1226
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| OCR Text |
...dy n epi n+ substrate n+ source polysilicon gate oxide source terminal gate terminal drain terminal cdg drain-source depletion width cgs creating an effective n-type material due to the depletion of the holes in the p-type channel. a high c... |
| Description |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
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| File Size |
38.53K /
4 Page |
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it Online |
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California Eastern Laboratories
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| Part No. |
GET-30704
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| OCR Text |
...he resistors are formed by polysilicon. the features of transistor cell are described below: (1) an optimal epitaxial layer grown by vpe(vapour phased epitaxy). (2) oxide isolation to reduce parasitic capacitance.... |
| Description |
Qualification Test Results on Si MMIC
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| File Size |
8,711.33K /
20 Page |
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it Online |
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