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  K4H511638D-LB0 Datasheet PDF File

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    K4H560838D-NC_LA0 K4H560838D-NC_LA2 K4H560838D-NC_LB0 K4H560838D-NC_LB3 K4H560438D-NC_LB3 K4H560438D-NC K4H560438D-NC_LA

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H560838D-NC_LA0 K4H560838D-NC_LA2 K4H560838D-NC_LB0 K4H560838D-NC_LB3 K4H560438D-NC_LB3 K4H560438D-NC K4H560438D-NC_LA0 K4H560438D-NC_LA2 K4H560438D-NC_LB0 K4H560438D-NC/LA0 K4H560438D-NC/LA2 K4H560438D-NC/LB0 K4H560438D-NC/LB3 K4H560838D-NC/LA0 K4H560838D-NC/LA2 K4H560838D-NC/LB0 K4H560838D-NC/LB3
Description 256MB STSOPII

File Size 89.94K  /  18 Page

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HUA FENG CIRCUIT





    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H280438F-TC/LA0 K4H280838F-TC/LA2 K4H280838F-TC/LB3 K4H280438F-TC/LA2 K4H280838F-TC/LB0 K4H280438F-TC/LB0
Description 128Mb F-die DDR SDRAM Specification 128Mb的的F - DDR SDRAM内存芯片规格
RESISTOR, 2M OHM, 0.063W, 1%

File Size 208.51K  /  23 Page

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    K4H560438D-NC/LA0 K4H560838D-NC/LA0 K4H560438D-NC/LA2 K4H560838D-NC/LA2 K4H560438D-NC/LB0 K4H560838D-NC/LB0 K4H560438D-N

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438D-NC/LA0 K4H560838D-NC/LA0 K4H560438D-NC/LA2 K4H560838D-NC/LA2 K4H560438D-NC/LB0 K4H560838D-NC/LB0 K4H560438D-NC/LB3 K4H560838D-NC/LB3
Description 256Mb sTSOPII 256Mb的sTSOPII
DIODE ZENER SINGLE 300mW 10Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-23 3K/REEL
DIODE ZENER SINGLE 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-323 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 9.95Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-363 3K/REEL

File Size 93.90K  /  18 Page

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    K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K4H560838E-TC_LAA K4H560838E-TC_LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB0 K4H560838E-TC/LB3
Description DDR SDRAM 256Mb E-die (x4, x8)

File Size 211.78K  /  24 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4H1G0438AUC/LB3 K4H1G0838AUC/LB0 K4H1G0438A-UC/LB0 K4H1G0838A-UC/LCC K4H1G0838A-UC/LB3 K4H1G0838A-UC/LA2 K4H1G0438A-UC/LA2 K4H1G0438A-UC/LCC
Description 1Gb A-die SDRAM Specification 1GB的芯片内存规

File Size 365.26K  /  24 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/LA2 K4H560838F-TC/LAA K4H561638F-TC/LAA K4H560838F-TC/LB0 K4H561638F-TC/LB0 K4H561638F-TC/LB3
Description 256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125

File Size 331.11K  /  23 Page

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    K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/LAA K4H561638F-UC/LAA K4H560838F-UC/LB0 K4H561638F-UC/LB0 K4H560838F-U

Samsung Semiconductor Co., Ltd.
Part No. K4H560838F-UC/LA2 K4H561638F-UC/LA2 K4H560838F-UC/LAA K4H561638F-UC/LAA K4H560838F-UC/LB0 K4H561638F-UC/LB0 K4H560838F-UC/LB3 K4H561638F-UC/LB3
Description 256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格

File Size 208.14K  /  23 Page

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    K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-V

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560838E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB0 K4H560838E-VCA2 K4H560438E-VCA2 K4H560438E-VLB3 K4H560838E-VCB3 K4H560438E-VLB0 K4H560438E-VLA2 K4H560438E-VCB3 K4H560838E-VLB0 K4H560838E-VLA2 K4H560838E-VCB0 K4H560438E-VCB0 K4H560838E-VLB3
Description 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片DDR SDRAM内存规格54 sTSOP与铅二无(符合RoHS

File Size 299.00K  /  23 Page

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    K4H560438E-ZC/LA2 K4H560838E-ZC/LA2 K4H560438E-ZC/LB0 K4H560838E-ZC/LB0 K4H560438E-ZC/LB3 K4H560838E-ZC/LB3 K4H560838E-Z

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560438E-ZC/LA2 K4H560838E-ZC/LA2 K4H560438E-ZC/LB0 K4H560838E-ZC/LB0 K4H560438E-ZC/LB3 K4H560838E-ZC/LB3 K4H560838E-ZCB3 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560838E-ZLA2 K4H560438E-ZCA2 K4H560838E-ZCB0 K4H560438E-ZCB0 K4H560838E-ZCA2 K4H560838E-ZLA20 K4H560438E-ZLA20
Description 64M X 4 DDR DRAM, 0.75 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.75 ns, PBGA60 ROHS COMPLIANT, FBGA-60
CSM, CER 103PF 1000V 10% 1210
CAP, 10NF 1KV 10%, SMT, 1812
Connector Cover; Enclosure Material:Aluminum; Cable Diameter Max:25.4mm; Cable Diameter Min:20.32mm; Cable Entry:Top; For Use With:AVX/Elco 8016 Series Rack and Panel Rectangular Connectors with 90 Contacts RoHS Compliant: Yes
CONN MEMORY CARD HDR CF NORMAL
CONN EJECTOR COMPACTFLASH RIGHT
Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:10; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; For Use With:C146 Rectangular Circular Connectors; Operating Voltage:400V RoHS Compliant: Yes
COVER, SIDE ENTRY, 38WAY; For use with:8016 Series Rectangular Connectors; Material:Aluminium; Colour:Grey; Connector type:Dust Cap & Cover; Contacts, No. of:38; Ways, No. of:38 RoHS Compliant: Yes
Rectangular Industrial Connector Housing; Series:C-146; No. of Contacts:6; Gender:Female; Body Material:Aluminum Alloy; Connecting Termination:Screw; Features:Spring Cover; For Use With:C146 Rectangular Circular Connectors RoHS Compliant: Yes
256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)

File Size 360.28K  /  23 Page

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    K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-T

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB3 K4H560438E-TC/LB3 K4H560438E-TC/LB0 K4H560438E-TC/LA2 K4H560438E-TC/LAA K4H560838E K4H560438E-TLAA K4H560838E-TCAA K4H560838E-TLAA K4H560438E-TCAA K4H560438E-TCB3 K4H560438E-TLB3
Description DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
   DDR SDRAM 256Mb E-die (x4, x8)

File Size 216.51K  /  24 Page

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