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8SDV0500 AZ3266X 1430AF B1517 01J11 W9N150V B1517 APC12K03
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  intensive-contact Datasheet PDF File

For intensive-contact Found Datasheets File :: 439    Search Time::1.219ms    
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    MS151 MS310 MS221 MS214 MS210 MS176 MS220 MS322 MS150 MS245 MS281 MS260 MS126 MS322-500-1 MS315-1M MS176-300K-1 MS220-10

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ETC
Caddock Electronics, Inc.
Part No. MS151 MS310 MS221 MS214 MS210 MS176 MS220 MS322 MS150 MS245 MS281 MS260 MS126 MS322-500-1 MS315-1M MS176-300K-1 MS220-100K-1 MS244-500K-1 MS223-499K-1 MS223-41.7K-1
OCR Text ...MS Resistors are produced under intensive manufacturing controls with processes which include power conditioning, overvoltage conditioning, ...contact/dist.html Sales and Corporate Office 1717 Chicago Avenue Riverside, California 92507-2364...
Description Power Film Resistors

File Size 229.43K  /  2 Page

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    STN8811A12 STN8811B3A12HSBE

STMicroelectronics
Part No. STN8811A12 STN8811B3A12HSBE
OCR Text ...ver such data-heavy, processing-intensive services, portable handheld systems must be optimized for performance and low power, space and cost. In response to this need, the STn8811A12 processor platform from STMicroelectronics is a culminat...
Description Mobile multimedia application processor

File Size 314.51K  /  18 Page

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    8STH06FP

Vishay Siliconix
Part No. 8STH06FP
OCR Text ...le performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boostin...contact: diodes-tech@vishay.com www.vishay.com 1 New Product 8STH06FP Vishay High Power Pr...
Description Hyperfast Rectifier, 8 A FRED PtTM

File Size 117.88K  /  5 Page

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    15STH06FP

Vishay Siliconix
Part No. 15STH06FP
OCR Text ...le performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boostin...contact: diodes-tech@vishay.com www.vishay.com 1 New Product 15STH06FP Vishay High Power P...
Description Hyperfast Rectifier, 15 A FRED PtTM

File Size 117.97K  /  5 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KBE00S009M-D411 KBE00S009M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the extended reliability of 100K program/erase cycles by providing E...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description From old datasheet system
1Gb NAND x 2 256Mb Mobile SDRAM x 2

File Size 1,891.88K  /  86 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KBE00G003M-D411 KBE00G003M
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the extended reliability of 100K program/erase cycles by providing E...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description NAND 512Mb*2 Mobile SDRAM 256Mb*2

File Size 1,236.80K  /  89 Page

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    C10-642865-001 C10-642449-001 C10-639772-001 C10-642495-241

Amphenol Corporation
Part No. C10-642865-001 C10-642449-001 C10-639772-001 C10-642495-241
OCR Text ...ssors. this method can be labor intensive and may require special crimping and assembly tools as well. the amphenol ? radsok ? solution to...contact your nearest amphenol corporation sales office for the latest spe cifications. all statement...
Description Amphenol Industrial RADSOK Products for Printed Circuit Boards

File Size 1,809.16K  /  2 Page

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    SAMSUNG[Samsung semiconductor]
Part No. KBE00F005A-D411 KBE00F005A
OCR Text ...rgining of data. Even the write-intensive systems can take advantage of the extended reliability of 100K program/erase cycles by providing E...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description 512Mb NAND*2 256Mb Mobile SDRAM*2

File Size 1,346.36K  /  87 Page

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