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  insulated gate bipolar transis Datasheet PDF File

For insulated gate bipolar transis Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description insulated gate bipolar transistor N-Channel
insulated gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247AD
insulated gate bipolar transisTOR
   insulated gate bipolar transisTOR

File Size 367.67K  /  10 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
insulated gate bipolar transisTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar transisTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
insulated gate bipolar transisTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar transisTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
insulated gate bipolar transisTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15M321
Description insulated gate bipolar transisTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA insulated gate bipolar transisTOR SILICON N CHANNEL IGBT

File Size 257.03K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15Q311
Description insulated gate bipolar transisTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
TOSHIBA insulated gate bipolar transistor Silicon N Channel IGBT

File Size 167.37K  /  7 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT90AM-18
Description Integrated gate bipolar transistor (IGBT) Modules: 250V
insulated gate bipolar transisTOR

File Size 22.58K  /  2 Page

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    IRF[International Rectifier]
Part No. IRG4BC30KD-S IRG4BC30KD-STRR IRG4BC30KDS IRG4BC30KD-STRL
Description 600V UltraFast 8-25 kHz Copack IGBT in a D2-Pak package
insulated gate bipolar transisTOR WITH ULTRAFAST SOFT RECOVERY DIODE
insulated gate bipolar transisTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 223.21K  /  10 Page

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    MGW14N60ED-D

ON Semiconductor
Part No. MGW14N60ED-D
Description insulated gate bipolar transistor N-Channel Enhancement-Mode Silicon gate

File Size 124.38K  /  6 Page

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    MMG05N60D-D

ON Semiconductor
Part No. MMG05N60D-D
Description insulated gate bipolar transistor N-Channel Enhancement-Mode Silicon gate

File Size 121.44K  /  6 Page

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For insulated gate bipolar transis Found Datasheets File :: 150+       Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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