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id-4.2a Datasheet PDF File

For id-4.2a Found Datasheets File :: 6122 Search Time::2.765ms
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				GE Security, Inc. GE[General Semiconductor] Panjit International Inc Shanghai Sunrise Electronics
Part No.	P6KE200 P6KE47 P6KE51 P6KE300 P6KE56 P6KE33 P6KE75 P6KE8.2 P6KE22 P6KE220 P6KE12 P6KE120 P6KE110 P6KE10 P6KE100 P6KE15 P6KE150 P6KE130 P6KE43 P6KE62 P6KE91 P6KE400 P6KE6.8 P6KE160 P6KE440 P6KE170 P6KE36 P6KE39 P6KE300A P6KE100A P6KE7.5A P6KE7.5 P6KE20 P6KE33A P6KE82 P6KE440A P6KE10A P6KE11 P6KE110A P6KE11A P6KE120A P6KE12A P6KE13 P6KE130A P6KE13A P6KE150A P6KE15A P6KE16 P6KE160A P6KE16A P6KE170A P6KE18 P6KE180 P6KE180A P6KE18A P6KE200A P6KE20A P6KE220A P6KE22A P6KE24 P6KE24A P6KE250 P6KE250A P6KE27 P6KE27A P6KE30 P6KE30A P6KE350 P6KE350A P6KE36A P6KE39A P6KE400A P6KE43A P6KE47A P6KE51A P6KE56A P6KE6.8A P6KE62A P6KE68 P6KE68A P6KE75A P6KE8.2A P6KE82A P6KE9.1 P6KE9.1A P6KE91A
OCR Text	...r bi-directional types Typical ID less than 1A above 10V High temperature soldering guaranteed: 265C/10 seconds, 0.375" (9.5mm) lead lengt...4 gram Dimensions in inches and (millimeters) DEVICES FOR BIDIRECTIONAL APPLICATIONS For bi-d...
Description	TransZorb Transient Voltage Suppressor(TransZorb瞬变电压抑制 TransZorb瞬态电压抑制器（TransZorb瞬变电压抑制器） TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR TRANSZORB瞬态电压抑制器 GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 600Watt Peak Power 5.0 Watt Steady State) TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W
File Size	64.63K / 4 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated] Diodes Inc.
Part No.	2N7002-01
OCR Text	...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C Ch...4 3/4 1.0 3/4 3/4 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	61.72K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	2N7002DW
OCR Text	...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002DW 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C ...4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	64.65K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	2N7002T
OCR Text	...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 20 40 115 73 800 150 833 -55 to +150 Units V V V mA mW C/W C Characterist...4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 2.0 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	83.69K / 3 Page	View it Online	Download Datasheet

				Diodes Inc. DIODES[Diodes Incorporated]
Part No.	2N7002V 2N7002V-7 2N7002VA-7
OCR Text	...s Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 60 60 20 40 280 1.5 150 833 -55 to +150 Units V V V mA A mW C/W C Character...4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout docu...
Description	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	67.17K / 3 Page	View it Online	Download Datasheet

				Diodes Inc. DIODES[Diodes Incorporated]
Part No.	2N7002W
OCR Text	...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002W 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C ...4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4...
Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	67.04K / 3 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ459
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --450 30 --4 --16 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Vo...
Description	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications 超高速开关应 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	32.07K / 4 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	...) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings (Ta = 25C) I...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SJ485 2SJ485TP-FA
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -60 20 -4 -16 1 20 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdo...
Description	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 4A I(D) \| TO-252VAR P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	42.21K / 4 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	2SJ499
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10ms, duty cycle1% Tc=25C Conditions Ratings --30 20 --10 --32 1.0 30 150 --55 to +150 ...4 2SJ499 --12 ID -- VDS --8 . --6 0V .0V --20 ID -- VGS VDS=--10V --18 --10 ...
Description	Load Switching Applications
File Size	31.35K / 4 Page	View it Online	Download Datasheet

For id-4.2a Found Datasheets File :: 6122 Search Time::2.765ms
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