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  id-11.2a Datasheet PDF File

For id-11.2a Found Datasheets File :: 4543    Search Time::1.609ms    
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    2N7002-01

DIODES[Diodes Incorporated]
Diodes Inc.
Part No. 2N7002-01
OCR Text ...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C Ch...11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7.5 13.5 0.5 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ...
Description    N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 61.72K  /  3 Page

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    2N7002DW

DIODES[Diodes Incorporated]
Part No. 2N7002DW
OCR Text ...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002DW 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C ...11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 64.65K  /  3 Page

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    2N7002T

DIODES[Diodes Incorporated]
Part No. 2N7002T
OCR Text ...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG Value 60 60 20 40 115 73 800 150 833 -55 to +150 Units V V V mA mW C/W C Characterist...11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 83.69K  /  3 Page

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    2N7002V 2N7002V-7 2N7002VA-7

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002V 2N7002V-7 2N7002VA-7
OCR Text ...s Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 60 60 20 40 280 1.5 150 833 -55 to +150 Units V V V mA A mW C/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage (Note 3) Drain Current (Note 3) Drain Curren...
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.17K  /  3 Page

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    2N7002W

Diodes Inc.
DIODES[Diodes Incorporated]
Part No. 2N7002W
OCR Text ...s Continuous @ 100C Pulsed VGSS ID Pd RqJA Tj, TSTG 2N7002W 60 60 20 40 115 73 800 200 1.60 625 -55 to +150 Units V V V mA mW mW/C K/W C ...11 2.0 7.0 11 Max 3/4 1.0 500 10 2.0 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Unit V A nA V W A mS pF pF pF ...
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 67.04K  /  3 Page

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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --450 30 --4 --16 1.65 70 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Vo...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10ms, duty cycle1% Tc=25C Conditions Ratings --30 20 --10 --32 1.0 30 150 --55 to +150 ...11 --0.9 --1.2 45 68 Ratings min --30 --10 10 --2.5 typ max Unit V A A V S m m pF pF pF ns ns ns ns ...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 ...11 45 30 -1.05 50 Max -- -- -10 10 -2.0 0.46 0.63 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S p...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ597

SANYO[Sanyo Semicon Device]
Part No. 2SJ597
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings --60 20 --4 --16 1 15 150 --55 to +150 Unit...11 28 13 9.8 1.4 1.7 --0.92 --1.2 400 560 Ratings min --60 --10 10 --2.4 typ max Unit V A A V S m m ...
Description P-Channel Silicon MOSFET DC / DC Converter Applications

File Size 30.93K  /  4 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ...e 1% 2. Value at TC = 25C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 30 3 12 3 30 150 -55 to +150 Uni...11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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