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For i i2pak Found Datasheets File :: 439    Search Time::1.203ms    
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    STB11NB40 5418

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB11NB40 5418
OCR Text ...LANCHE CHARACTERiSTiCS Symb ol i AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) S...i2PAK) MECHANiCAL DATA mm MiN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 8.95...
Description N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的)
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
From old datasheet system

File Size 101.13K  /  9 Page

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    STB13005-1 ST13005 5262 STB13005 ST13005-1

STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STB13005-1 ST13005 5262 STB13005 ST13005-1
OCR Text ...GS Symbol V CES V CEO V EBO iC i CM iB i BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (iB = ...i2PAK) MECHANiCAL DATA mm MiN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10...
Description HiGH VOLTAGE FAST-SWiTCHiNG NPN POWER TRANSiSTORS 高压快速开关NPN电源晶体
From old datasheet system

File Size 77.38K  /  8 Page

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    STB20NM50FD-1 STP20NM50FD

STMICROELECTRONICS[STMicroelectronics]
Part No. STB20NM50FD-1 STP20NM50FD
OCR Text ...50FD B20NM50FD-1 PACKAGE TO-220 i PAK 2 PACKAGiNG TUBE TUBE August 2003 1/9 STP20NM50FD/STB20NM50FD-1 ABSOLUTE MAXiMUM RATiNGS...i2PAK) MECHANiCAL DATA mm. DiM. MiN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 ...
Description N-CHANNEL 500V - 0.22ohm - 20A TO-220/i2PAK FDmesh⑩ Power MOSFET with FAST DiODE
N-CHANNEL 500V - 0.22ohm - 20A TO-220/i2PAK FDmesh Power MOSFET with FAST DiODE

File Size 275.38K  /  9 Page

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    STB45N10L 4857

STMICROELECTRONICS[STMicroelectronics]
Part No. STB45N10L 4857
OCR Text ...GS Symbol V DS VDGR V GS iD iD i DM (*) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-sou...i2PAK) MECHANiCAL DATA mm MiN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2....
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSiSTOR

File Size 86.46K  /  6 Page

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    STB80NF03L-04

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB80NF03L-04
OCR Text ...S Symbol V DS V DGR V GS iD iD i DM (*) P tot dv/dt Ts tg Tj March 2000 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS ...i2PAK TO-262 (suffix "-1") D2PAK TO-263 (suffix "T4") iNTERNAL SCHEMATiC DiAGRAM Value 30 3...
Description Circular Connector; MiL SPEC:MiL-C-26482, Series i, Solder; Body Material:Metal; Series:PC C-26482 Series i; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWER MOSFET

File Size 56.19K  /  7 Page

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    STB80NF55-06 STP80NF55-06FP STB80NF55-06-1 STB80NF55-06T4 STP80NF55-06

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB80NF55-06 STP80NF55-06FP STB80NF55-06-1 STB80NF55-06T4 STP80NF55-06
OCR Text ...S Symbol V DS V DGR V GS iD iD i DM (*) P tot dv/dt Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k) G a...i2PAK TO-262 (suffix "-1") D2PAK TO-263 (suffix "T4") iNTERNAL SCHEMATiC DiAGRAM Value 55 5...
Description N-channel 55V - 0.005з - 80A - TO-220 /FP - i2PAK - D2PAK STripFET⑩ ii Power MOSFET
N - CHANNEL 55V - 0.005ohm - 80A TO-262/TO-263 STripFET POWER MOSFET
N-channel 55V - 0.005 - 80A - TO-220 /FP - i2PAK - D2PAK STripFET ii Power MOSFET
N-channel 55V - 0.005?/a> - 80A - TO-220 /FP - i2PAK - D2PAK STripFET?/a> ii Power MOSFET

File Size 56.09K  /  7 Page

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    STB3NA60-1 4890

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NA60-1 4890
OCR Text ...GS Symbol V DS VDGR V GS iD iD i DM (*) P t ot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-so...i2PAK) MECHANiCAL DATA mm MiN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2....
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSiSTOR
From old datasheet system

File Size 114.20K  /  9 Page

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    STB3NA80 4229 STB3NA80T4

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NA80 4229 STB3NA80T4
OCR Text ... Symb ol V DS V DGR V GS iD iD i DM (*) P tot T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-so...i2PAK) MECHANiCAL DATA mm MiN. A A1 B B1 B2 C C2 D e E L L1 L2 4.3 2.49 0.7 1.2 1.25 0.45 1.21 9 2....
Description Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; initial Resistance Min:0.32ohm; initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSiSTOR
From old datasheet system

File Size 126.03K  /  10 Page

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    STB3NB60 5982

STMicroelectronics
Part No. STB3NB60 5982
OCR Text ...LANCHE CHARACTERiSTiCS Symb ol i AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single P...i2PAK Thermal impedance for D2PAK/i2PAK 3/9 STB3NB60 Output Characteristics Transfer Chara...
Description From old datasheet system
N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/i2PAK PowerMESH MOSFET

File Size 90.97K  /  9 Page

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    STB3NC60 STB3NC60T4 STB3NC60-1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. STB3NC60 STB3NC60T4 STB3NC60-1
OCR Text ... Symb ol V DS V DGR V GS iD iD i DM (*) P tot dv/dt(1) T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k)...i2PAK Thermal impedancefor D2PAK/i2PAK 3/9 STB3NC60 Output Characteristics Transfer Charac...
Description TRANSiSTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A i(D) | TO-262AA
TRANSiSTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A i(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/i 2 PAK PowerMESH ii MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/i2PAK PowerMESHii MOSFET

File Size 93.20K  /  9 Page

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For i i2pak Found Datasheets File :: 439    Search Time::1.203ms    
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