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IRF[International Rectifier]
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Part No. |
IRHM9160
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OCR Text |
...s P-channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, Internatio... |
Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
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File Size |
87.31K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHM9064
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OCR Text |
...s P-Channel RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, Internatio... |
Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
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File Size |
101.13K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHM8230 IRHM7230
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OCR Text |
...Rectifier's RAD HARD technology hexfets demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Intern... |
Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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File Size |
295.92K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRHM7C50SE IRHM2C50SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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File Size |
101.94K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHM7450SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
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File Size |
91.39K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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Part No. |
IRHM7264SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)
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File Size |
91.23K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHI7460SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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File Size |
83.17K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHI7360SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=24.3A)
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File Size |
83.22K /
4 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRHF7310SE
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OCR Text |
...ier's (SEE) RAD HARD technology hexfets demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD hexfets retain identical electrical specification... |
Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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File Size |
35.65K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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