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  grs Datasheet PDF File

For grs Found Datasheets File :: 108    Search Time::16.266ms    
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    MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. 2N5555 ON0063
OCR Text ...(VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 gr...
Description CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching

File Size 270.30K  /  8 Page

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    Vishay
Part No. 2N5911 70255
OCR Text ...0 500 1000 f - Frequency (MHz) -grs bog, bos 1 grg 0.1 gog, gos 100 200 500 1000 f - Frequency (MHz) Siliconix P-37407--Rev. C, 04-Jul-94 5 2N5911/5912 Typical Characteristics (Cont'd) 50 Equivalent Input Noise Vol...
Description Matched N-Channel JFET Pairs
From old datasheet system

File Size 77.95K  /  6 Page

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    Vishay Intertechnology,Inc.
Part No. J305 J304 70236
OCR Text ...ut Admittance bos 1 gos -grs 0.1 0.1 TA = 25_C VDS = 15 V VGS = 0 V Common Source 0.01 100 0.01 200 500 1000 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Siliconix P-37404--Rev. C, 04-Jul-94 5 J304/305 Typical C...
Description N-Channel JFET(最小栅源击穿电30V,最小饱和漏极电mA的N沟道结型场效应管)
From old datasheet system
N-Channel JFETs

File Size 68.72K  /  6 Page

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    2N5484 2N5486

ONSEMI[ON Semiconductor]
Part No. 2N5484 2N5486
OCR Text ...(VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 gr...
Description JFET VHF/UHF Amplifiers

File Size 276.41K  /  8 Page

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    PMBFJ212 PMBFJ210 PMBFJ211

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMBFJ212 PMBFJ210 PMBFJ211
OCR Text ...5 C. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conduc...
Description N-channel field-effect transistors

File Size 95.87K  /  12 Page

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    PMBFJ310 PMBFJ308 PMBFJ309

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PMBFJ310 PMBFJ308 PMBFJ309
OCR Text ...ecified. SYMBOL Cis Crs gis gfs grs gos Vn PARAMETER input capacitance reverse transfer capacitance common source input conductance common source transfer conductance common source reverse conductance common source output conductance equiva...
Description N-channel silicon field-effect transistors

File Size 97.74K  /  12 Page

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    2N5486 2N5486-D 2N5486RLRP

ONSEMI[ON Semiconductor]
Part No. 2N5486 2N5486-D 2N5486RLRP
OCR Text ...(VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 20...
Description JFET VHF/UHF Amplifiers N-Channel - Depletion

File Size 170.27K  /  8 Page

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    Vishay
Part No. J210 70234
OCR Text ... Output Admittance -brg 0.1 -grs bog, bos 1 -grg 0.01 100 200 grg 0.1 500 1000 gog, gos 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) 50 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 ...
Description N-Channel JFETs
From old datasheet system

File Size 69.09K  /  6 Page

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    J210 J212 J211

PHILIPS[Philips Semiconductors]
Philips Semiconductors / NXP Semiconductors
Part No. J210 J212 J211
OCR Text ...5 C. SYMBOL Cis Cos Crs gis gfs grs gos Vn PARAMETER input capacitance output capacitance feedback capacitance common source input conductance common source transfer conductance common source feedback conductance common source output conduc...
Description N-channel field-effect transistors

File Size 95.63K  /  12 Page

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    BF992 BF992_3

PHILIPS[Philips Semiconductors]
Part No. BF992 BF992_3
OCR Text ... 15 -brs 10 -bfs 40 5 grs 0 10 0 10 102 f (MHz) 103 102 103 f (MHz) VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C. VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 C. Fig.9 Forward transfer admittance a...
Description Silicon N-channel dual gate MOS-FET
From old datasheet system

File Size 63.05K  /  12 Page

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For grs Found Datasheets File :: 108    Search Time::16.266ms    
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