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TY Semiconductor Co., L...
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| Part No. |
2SB1121
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| Description |
Adoption of fbet, MBIT processes. Low collector-to-emitter saturation voltage.
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| File Size |
110.46K /
2 Page |
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it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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| Part No. |
2SA1416
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| Description |
Adoption of fbet, MBIT Processes High Breakdown Voltage and Large Current Capacity
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| File Size |
559.14K /
3 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SA1417
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| Description |
Adoption of fbet, MBIT Processes High Breakdown Voltage and Large Current Capacity
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| File Size |
564.49K /
3 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SC3649
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| Description |
Adoption of fbet, MBIT Processes High Breakdown Voltage and Large Current Capacity
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| File Size |
564.29K /
3 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., L...
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| Part No. |
2SB1122
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| Description |
Adoption of fbet process Very small size making it easy to provide highdensity hybrid ICS
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| File Size |
110.08K /
2 Page |
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it Online |
Download Datasheet |
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TY Semiconductor Co., Ltd
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| Part No. |
2SA1813
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| Description |
Very small-sized package. Adoption of fbet process. High DC current gain (hFE=500 to 1200).
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| File Size |
68.07K /
1 Page |
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it Online |
Download Datasheet |
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Price and Availability
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