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  die rectifiers Datasheet PDF File

For die rectifiers Found Datasheets File :: 923    Search Time::1.469ms    
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    MUR180E

ON Semiconductor
Part No. MUR180E
OCR Text ...ained for the mur8100e (similar die construction as the mur1100e series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 v, and using equation (2) the energy absorbed by the mur8100e is approximat...
Description (MUR180E / MUR1100E) Power rectifiers

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    MUR1100ERLG MUR1100EG MUR180E_06 MUR1100E MUR1100ERL MUR180E MUR180EG MUR180ERL MUR180ERLG

ONSEMI[ON Semiconductor]
Part No. MUR1100ERLG MUR1100EG MUR180E_06 MUR1100E MUR1100ERL MUR180E MUR180EG MUR180ERL MUR180ERLG
OCR Text ...ained for the MUR8100E (similar die construction as the MUR1100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximat...
Description SWITCHMODE Power rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE

File Size 76.09K  /  6 Page

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    ON Semi
Part No. TRA2525 MR3025 ON2996
OCR Text ...as it may lead to damage of the die or encapsulant of the part. http://onsemi.com 6 TRA2525 MR3025 Button holding fixtures for use during soldering may be of various materials. Stainless steel has a longer use life while black anodi...
Description ORDERING INFORMATION
From old datasheet system

File Size 121.02K  /  8 Page

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    IRHN2C50SE

International Rectifier
Part No. IRHN2C50SE
OCR Text ... in.) from package to center of die. measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. modified mosfet symbol showing the internal inductances. na a k/w ? 4 .com u datasheet radiation performance of r...
Description (IRHN2C50SE / IRHN7C50SE) TRANSISTOR N-CHANNEL

File Size 208.82K  /  4 Page

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    UPS5817E3 UPS5819E3

Microsemi Corporation
Part No. UPS5817E3 UPS5819E3
OCR Text ... low forward voltage Guard-ring-die construction for transient protection Silicon Schottky (hot carrier) rectifier for minimal trr and minim...rectifiers SCOTTSDALE DIVISION WWW .Microsemi .C OM ELECTRICAL CHARACTERISTICS (TA=25oC unles...
Description POWERMITE 1?SURFACE MOUNT 1 AMP 20 and 40 V SCHOTTKY rectifiers
POWERMITE 1??SURFACE MOUNT 1 AMP 20 and 40 V SCHOTTKY rectifiers
POWERMITE 1垄芒 SURFACE MOUNT 1 AMP 20 and 40 V SCHOTTKY rectifiers

File Size 290.42K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MUR490E_06 MUR4100E MUR4100EG MUR4100ERL MUR4100ERLG MUR490E
OCR Text ...ained for the MUR8100E (similar die construction as the MUR4100E Series) in this test circuit conducting a peak current of one ampere at a breakdown voltage of 1300 V, and using Equation (2) the energy absorbed by the MUR8100E is approximat...
Description ULTRAFAST rectifiers 4.0 AMPS, 900 - 1000 VOLTS

File Size 75.57K  /  5 Page

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    JANSH2N7262

International Rectifier
Part No. JANSH2N7262
OCR Text ...5 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet sym- bol showing the internal inductances. source-drain diode ratings and characteristics ? parameter min ty...
Description Quadruple 2-Input Exclusive-OR Gates 14-TSSOP -40 to 85

File Size 303.37K  /  12 Page

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    MBRB3030CTLG MBRB3030CTL

ON Semiconductor
Part No. MBRB3030CTLG MBRB3030CTL
OCR Text ...ng Junction Temperature Maximum die Size Short Heat Sink Tab Manufactured - Not Sheared! Pb-Free Package is Available SCHOTTKY BARRIER RE...rectifiers Prepared by: David Shumate & Larry Walker ON Semiconductor Products Sector ABSTRACT P...
Description SWITCHMODE Power Rectifier

File Size 83.68K  /  8 Page

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    IRH7450

International Rectifier
Part No. IRH7450
OCR Text ...5 in) from package to center of die. modified mosfet sym- bol showing the internal inductances. w m a measured from source lead, 6mm (0.25 in) from package to source bonding pad. ? thermal resistance parameter min typ max units test condit...
Description (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

File Size 324.59K  /  12 Page

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    International Rectifier, Corp.
Part No. JANSH2N7261
OCR Text ...5 in) from package to center of die. measured from source lead, 6mm (0.25 in) from package to source bonding pad. modified mosfet sym- bol showing the internal inductances. source-drain diode ratings and characteristics parameter min typ m...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 重复性雪崩和DV /受好评的HEXFET晶体管胸

File Size 292.24K  /  12 Page

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For die rectifiers Found Datasheets File :: 923    Search Time::1.469ms    
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