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  ap-220. Datasheet PDF File

For ap-220. Found Datasheets File :: 1421    Search Time::1.015ms    
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    2SJ547

HITACHI[Hitachi Semiconductor]
Part No. 2SJ547
OCR Text ...ure Storage temperature Note: I AP Note3 Note3 Note2 -10 8.5 20 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 %...220 75 10 45 65 50 -1.2 70 Max -- -- -10 10 -2.0 0.21 0.36 -- -- -- -- -- -- -- -- -- -- Unit V V A ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.45K  /  9 Page

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    2SJ553 2SJ553L 2SJ553S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ553 2SJ553L 2SJ553S
OCR Text ...ure Storage temperature Note: I AP Note3 Note3 Note2 -30 77 75 150 -55 to +150 EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % ...220 -0.95 100 Max -- -- -10 10 -2.0 0.037 0.055 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 55.75K  /  9 Page

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    EDS2504APTA EDS2504APTA-75TI EDS2504APTA-7ATI EDS2504APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2508APTA-TI EDS2516APT

ELPIDA[Elpida Memory]
Part No. EDS2504APTA EDS2504APTA-75TI EDS2504APTA-7ATI EDS2504APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2508APTA-TI EDS2516APTA-75TI EDS2516APTA-7ATI EDS2516APTA-TI
OCR Text ...x 4 bits x 4 banks. The EDS2508 AP is a 256M bits SDRAM organized as 8,388,608 words x 8 bits x 4 banks. The EDS2516 AP is a 256M bits SDRAM...220 3 x8 130 110 3 2 20 9 4 3 30 15 135 250 220 3 x 16 135 115 3 2 20 9 4 3 30 15 145 250 220 3 Unit...
Description 256M bits SDRAM WTR (Wide Temperature Range)

File Size 529.59K  /  51 Page

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    AP1212 AP1212HN AP1212HNA AP1212HNL AP1212HNLA AP1212HS AP1212HSA AP1212HSL AP1212HSLA AP1212LN AP1212LNA AP1212LNL AP12

Diodes, Inc.
ANACHIP[Anachip Corp]
Diodes Incorporated
ETC[ETC]
http://
Part No. AP1212 AP1212HN AP1212HNA AP1212HNL AP1212HNLA AP1212HS AP1212HSA AP1212HSL AP1212HSLA AP1212LN AP1212LNA AP1212LNL AP1212LNLA AP1212LS AP1212LSA AP1212LSL AP1212LSLA
OCR Text AP1212 Dual USB High-Side Power Switch Features - Compliant to USB specifications - Dual independent switches control - 2.7V to 5.5V input...220 200 180 160 CURRENT ( A) 140 120 100 80 60 40 20 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 200 180 On-Cu...
Description Dual USB High-Side Power Switch 双USB高端功率开

File Size 243.46K  /  11 Page

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    HCF4517B HCF4517BC1 HCF4517BM1 HCC_HCF4517B HCC4517B HCC4517BF

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
Part No. HCF4517B HCF4517BC1 HCF4517BM1 HCC_HCF4517B HCC4517B HCC4517BF
OCR Text ... DI In Di In X X Stage 1 6 T ap Q16 Z Q16 Z Q16 D17 In Q16 Z Stage 3 2 Tap Q32 Z Q32 Z Q32 D33 In Q32 Z Stage 4 8 Ta p Q48 Z Q48 Z ...220 180 150 80 60 200 100 80 Unit t P HL , t P L H Propagation Delay Time : CL to Bit 16 Tap ...
Description DUAL 64-STAGE STATIC SHIFT REGISTER 4 -阶段静态移位寄存器
Dual 64-Stage Static Shift Regiater(4级静态移位寄存器)

File Size 242.91K  /  12 Page

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    AN6150

PANASONIC[Panasonic Semiconductor]
Part No. AN6150
OCR Text ...T 1 GND 2 V2 3 V1 4 AP 5 RO1 6 RO2 7 RF 8 RI s Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 GND 2V REG. 1V REG. ATT control REC output REC output REC filter REC input Pin name Pin No. 9 10 11 12 13 14 15 16 Pin name ...
Description Speech Network Circuit

File Size 50.83K  /  5 Page

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    AN6152

PANASONIC[Panasonic Semiconductor]
Part No. AN6152
OCR Text ...ock Diagram VCC 16 VL 15 ST 14 AP 13 NF 12 MI2 11 MI1 10 DT 9 Current Source ATT Control MIC Pre Amp. SEND Main Amp. ATT KT Pre Amp. DTMF Pre Amp. REC Main Amp. ATT REC Pre Amp. Logic VREF 1 GND 2 RO1...
Description Speech Network Circuit

File Size 29.87K  /  3 Page

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    K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text ...D N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49...220 220 210 210 210 1.5 800 mA mA uA 2 3 4 Notes : 1. Measured with outputs open. 2. ...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 107.61K  /  10 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text ...D N.C WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49...220 210 1.5 800 210 mA mA uA 2 3 4 Rev. 0.0 Mar. 2000 K4S280832C AC OPERATING TES...
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S28163

Samsung Electronic
Samsung semiconductor
Part No. K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text ... LDQM WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD CMOS SDRAM x8 x4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24...220 2 800 Test Condition CMOS SDRAM Version -60 130 2 2 20 -75 100 Unit Note ICC1 ICC...
Description 128Mb F-die SDRAM Specification
128Mb E-die SDRAM Specification

File Size 142.11K  /  14 Page

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