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Integrated Silicon Solution, Inc.
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| Part No. |
IS43R16160A
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| OCR Text |
...x16 pin descriptions a0-a12 row address input a0-a8 column address input ba0, ba1 bank select address dq0 to dq15 data i/o ck, ck system cl...programmable and are determined by address bits a 0 ?a 3 during the mode register set command. burs... |
| Description |
16Meg x 16 256-MBIT DDR SDRAM
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| File Size |
792.86K /
56 Page |
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it Online |
Download Datasheet
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Samsung Electronic
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| Part No. |
M368L2923MT1
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| OCR Text |
...ule. pin name function a0 ~ a12 address input (multiplexed) ba0 ~ ba1 bank select address dq0 ~ dq63 data input/output dqs0 ~ dqs7 data stro...programmable read latency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable b... |
| Description |
128Mx64 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
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| File Size |
91.26K /
14 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
M381L2923MT1
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| OCR Text |
...le. pin name function a0 ~ a1 2 address input (multiplexed) ba0 ~ ba1 bank select address dq0 ~ dq63 data input/output cb0 ~ cb7 check bit(d...programmable read latency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable b... |
| Description |
128Mx72 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
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| File Size |
93.70K /
14 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH28D72KLG-75 MH28D72KLG-10
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| OCR Text |
...ef resh and Self ref resh - Row address A0-12 / Column address A0-9,11 - SSTL_2 Interf ace - Module 2bank Conf igration - Burst Ty pe - sequential/interleav e(programmable) - Commands entered on each positiv e CLK edge
184pin
92pin
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| Description |
9,663,676,416-BIT (134,217,728-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
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| File Size |
334.70K /
39 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH1S72CPG-15 MH1S72CPG-10 MH1S72CPG-12 MH1S72CPG
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| OCR Text |
...operation controlled by BA(Bank Address) /CAS latency- 1/2/3(programmable) Burst length- 1/2/4/8(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto precharge / All bank precharge controlled by A10 Au... |
| Description |
From old datasheet system
75497472-BIT (1048576-WORD BY 72-BIT)SynchronousDRAM
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| File Size |
679.70K /
47 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1S64CWXTJ
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| OCR Text |
...operation controlled by BA(Bank Address) /CAS latency- 1/2/3(programmable) Burst length- 1/2/4/8(programmable) Burst type- sequential / interleave(programmable) Column access - random Auto precharge / All bank precharge controlled by A10 Au... |
| Description |
67108864-BIT (1048576-WORD BY 64-BIT)SynchronousDRAM
From old datasheet system
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| File Size |
683.46K /
45 Page |
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it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
M381L6523MT1
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| OCR Text |
...le. pin name function a0 ~ a1 2 address input (multiplexed) ba0 ~ ba1 bank select address dq0 ~ dq63 data input/output cb0 ~ cb7 check bit(d...programmable read latency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable b... |
| Description |
64Mx72 DDR SDRAM 184pin DIMM based on 64Mx8 Data Sheet
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| File Size |
90.59K /
14 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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