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Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
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| Part No. |
DCR1376SBA36 DCR1376SBA DCR1376SBA28 DCR1376SBA30 DCR1376SBA32 DCR1376SBA34
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| OCR Text |
...id for Tj = 125C for IT 500A to 8000A Where
Fig.3 Dissipation curves
5/8
www.dynexsemi.com
DCR1376SBA
10000 Conditions: Tj = 125C IT = 800A VR = 100V tp = 3ms - Trapezoidal
Total stored charge, QS - (C)
100
Table gives... |
| Description |
Phase Control Thyristor 2655 A, 3400 V, SCR
Phase Control Thyristor 2655 A, 3000 V, SCR
CONN COUPLNG HOOD HE SIZE4 LOWER 2655 A, 2800 V, SCR
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| File Size |
110.47K /
8 Page |
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DYNEX[Dynex Semiconductor]
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| Part No. |
DF75435 DF754 DF75430 DF75432 DF75434
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| OCR Text |
...ERS VRRM 3500V IF(AV) 865A IFSM 8000A Qr 1000C trr 6.0s
FEATURES
s Double Side Cooling s High Surge Capability s Low Recovery Charge
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V 3500 3400 3200 3000 Conditions
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| Description |
Fast Recovery Diode
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| File Size |
71.70K /
9 Page |
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SONY[Sony Corporation]
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| Part No. |
DM-106B
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| OCR Text |
...
RT-Total Resistance (k)
H=8000A/m (Revolving magnetic field) VCC=5V
3.0
DM-106B
Package Outline
Unit : mm
M-110
4.0 0.2
0.4
0.7 0.5 0.5
0.8 0.6 0.4
0.8
1.8
1.27
1.27
0.25 0.1
SONY CODE EI... |
| Description |
Magnetoresistance Element
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| File Size |
99.67K /
5 Page |
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it Online |
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ATMEL[ATMEL Corporation]
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| Part No. |
MH1RT MH1242
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| OCR Text |
...0A Ti + 1000A TiN 400A + 800A + 8000A + 250A TiN
SiO2/Si3N4 11000A / 10000A
4
Rev. 2 - Jan 2002
MH1RT QualPack
3.2 Product Design
Pad size opening Logic Effective Channel Length Gate Poly Width Gate Poly Spacing Metal 1 Metal ... |
| Description |
Radiation Tolerant 0.35 um CMOS
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| File Size |
781.25K /
22 Page |
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it Online |
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