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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP70N10A
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| OCR Text |
...GS=0V,ID=250 A ID=250 A See Fig 7 VDS=5V,ID=250 A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 C VGS=10V,ID=27.5A VDS=40V,ID=27.5A
4 O 4 O
3750 4870
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=70A, RG=5.3 See Fig 13 VDS=80V,VGS=10V, I... |
| Description |
Advanced Power MOSFET
N-Channel Power MOSFET
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| File Size |
359.59K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP5N80A
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| OCR Text |
...76 110 46 21 40 91 32 52 8.9 24.7 --3.5 100 -100 25 250 2.2 -130 55 50 90 190 75 68 --nC ns A V
Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=700V VDS=560V,TC=125 C VGS=10V,ID=2A VDS=50V,ID=2A
4 O* 4 O
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| Description |
Advanced Power MOSFET
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| File Size |
249.39K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP5N60A
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| OCR Text |
... VDS=50V,ID=2.25A
See Fig 7
VDS=5V,ID=250A
625 810
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=300V,ID=4.5A, RG=11 See Fig 13 VDS=480V,VGS=10V, ID=4.5A See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol... |
| Description |
Advanced Power MOSFET
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| File Size |
227.30K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP4N80AS
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| OCR Text |
...------3.47 90 35 19 32 67 32 40 7.3 18.1 --3.5 100 -100 25 250 3.0 -105 42 50 75 145 75 52 --nC ns A pF V V/ C V nA
Test Condition VGS=0V,I D=250A ID=250A VGS=30V VGS=-30V VDS=800V VDS=640V,T C=125 C VGS=10V,I D=0.85A VDS=50V,I D=0.8... |
| Description |
ADVANCED POWER MOFET
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| File Size |
279.41K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP1N60A
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| OCR Text |
...---------0.74 ------0.83 145 20 7 10 13 28 13 7.5 1.2 4 --4.0 100 -100 25 250 12 -190 24 9 30 35 65 35 11 --nC ns pF A V V nA
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Test Condition VGS... |
| Description |
Advanced Power MOSFET
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| File Size |
248.21K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSP1N50B
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| OCR Text |
... = 1.0 MHz ---260 25 5.5 340 33 7.2 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VD... |
| Description |
520V N-Channel MOSFET
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| File Size |
626.90K /
8 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM6E01TU
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| OCR Text |
...
JEDEC JEITA TOSHIBA Weight: 7.0 mg (typ.)
Maximum Ratings (Q1, Q2 common) (Ta = 25C)
Characteristics Drain power dissipation Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 0.5 150 -55~150 Unit... |
| Description |
Multi-Chip Device Silicon P-Channel MOS Type (U-MOS II) N-Channel MOS Type (Planer) Load Switch Applications
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| File Size |
174.93K /
9 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM5N15FE
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| OCR Text |
...4.0 (max) (@VGS = 4 V) : Ron = 7.0 (max) (@VGS = 2.5 V) Unit: mm
Maximum Ratings (Ta = 25C) (Q1, Q2 Common)
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note) Tch Tstg Rati... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
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| File Size |
140.34K /
5 Page |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
SSM5G01TU
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| OCR Text |
...A C
JEITA TOSHIBA
Weight: 7 mg (typ.)
Maximum Ratings (Ta = 25C) MOSFET, DIODE COMMON
Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating -55~125 -40~100 Unit C C
Note 1: Mounted on FR4 bo... |
| Description |
Silicon P Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Planar Diode DC-DC Converter for DSCs and Camcorders
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| File Size |
196.88K /
9 Page |
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Price and Availability
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