6.1a pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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6.1a Datasheet PDF File

For 6.1a Found Datasheets File :: 171 Search Time::4.078ms
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				SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
Part No.	SSD50P03-09D SSD50P03-15
OCR Text	61a, -30v, r ds(on) 9m p-ch enhancement mode power mosfet elektronische bauelemente 02-dec-2010 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product ...
Description	P-Ch Enhancement Mode Power MOSFET
File Size	150.10K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF6718L2TR IRF6718L2TR1PBF IRF6718L2TRPBF
OCR Text	...V VDS= 13V A mJ A ID = 61A 3 2 T J = 125C 1 T J = 25C 0 2 4 6 8 10 100 120 140 160 180 VGS, Gate -to -Source Voltage (V) QG Total Gate Charge (nC) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Fig 2. Typical ...
Description	DirectFET Power MOSFET
File Size	279.11K / 10 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	KDB3652
OCR Text	...) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V Low Miller Charge +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 UIS Capability (Single Pulse and Repetitive Pulse) +0.2 5.28-0.2 0.1max +0.1 0.81-0.1 ...
Description	N-Channel PowerTrench MOSFET
File Size	49.55K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PSMN7R0-30YLC
OCR Text	...5c; v gs =10v; see figure 1 --61a p tot total power dissipation t mb = 25 c; see figure 2 --48w t j junction temperature -55 - 175 c static characteristics r dson drain-source on-state resistance v gs =4.5v; i d =20a; t j =25c; see fi...
Description	N-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technology N-channel 30 V 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology
File Size	312.19K / 15 Page	View it Online	Download Datasheet

				Fairchild
Part No.	FDB3652FDP3652FDI3652
OCR Text	61A, 16m Features * r DS(ON) = 14m (Typ.), VGS = 10V, ID = 61A * Qg(tot) = 44nC (Typ.), VGS = 10V * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101 Formerly developmenta...
Description	N-Channel UltraFET® Trench MOSFET
File Size	202.86K / 11 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM61P02 ZXM61P02F ZXM61P02FTA ZXM61P02FTC
OCR Text	...6 -0.95 V ns nC T j=25C, I S=-0.61A, V GS=0V T j=25C, I F=-0.61A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.9 6.7 11.2 10.1 3.5 0.5 1.5 ns ns ns ns nC nC nC V DS=-16V,V GS=-4.5V, I D =-0.61A (Refer to test circuit) V DD =-10V, I D...
Description	P-channel MOSFET 20V P-CHANNEL ENHANCEMENT MODE MOSFET
File Size	227.66K / 7 Page	View it Online	Download Datasheet

				Comset Semiconductor
Part No.	BSS60A BSS61A BSS62A
OCR Text	61A-62A SILICON PLANAR EPITAXIAL TRANSISTORS They are PNP transistors mounted in TO-39 metal package. They are designed for use in industrial switching applications e.g. print hammer, solenoid, relay and lamp driving . NPN complements a...
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
File Size	162.91K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLML6302PBF-1 IRLML6302PBF-1-15
OCR Text	...?? -1.2 v t j = 25c, i s = -0.61a, v gs = 0v t rr reverse recovery time ??? 35 53 ns t j = 25c, i f = -0.61a q rr reverse recovery charge ??? 26 39 nc di/dt = -100a/ s $%& " s d g ...
Description	Compatible with Existing Surface Mount Techniques
File Size	254.13K / 8 Page	View it Online	Download Datasheet

For 6.1a Found Datasheets File :: 171 Search Time::4.078ms
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