4.6mj pdf Datasheet P2 Full Text Search --- IC-ON-LINE


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4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 162 Search Time::2.094ms
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				INFINEON[Infineon Technologies AG]
Part No.	SPW11N60C2
OCR Text	... VGS(th) IDSS 600 3.5 700 4.5 5.5 V Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS...6mJ 300 720 V W V (BR)DSS 680 P AR 660 640 200 150 620 600 580 50 560 54...
Description	for lowest Conduction Losses & fastest Switching Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
File Size	118.43K / 11 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB04N60 SKP04N60
OCR Text	... Symbol VCE IC Value 600 9.4 4.9 Unit V A ICpul s IF 19 19 10 4 IFpul s VGE tSC Ptot 19 20 10 50 V s W VGE = 15V, VCC 6...6mJ ) Eon and Ets include losses due to diode recovery. 0.4mJ ) Eon and Ets include losses du...
Description	IGBTs & DuoPacks - 4A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	390.12K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB10N60A SKP10N60A SKW10N60A
OCR Text	...0AB TO-247AC TO-263AB 1.35 2.4 62 40 40 K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Ch...6mJ 0.1 0.05 0.02 0,4mJ Ets* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 , (s) 0.0358 4.3...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
File Size	442.88K / 15 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGB15N60T
OCR Text	..., V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 15A V G E = 1 5V T O -263-3- 2 IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 15A 4...6mJ 0.5mJ 0.4mJ E off 0.3mJ E on* 0.2mJ 25C 50C 75C 100C 125C 150C E ts * E, SWITCHING ENERGY LOS...
Description	Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
File Size	361.51K / 12 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IKB15N60T
OCR Text	..., V G E = 0V, f= 1 M Hz V C C = 4 80V, I C = 15A V G E = 1 5V T O -220-3- 1 IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 15A 4...6mJ 0.5mJ 0.4mJ E off 0.3mJ E on* 0.2mJ 25C 50C 75C 100C 125C 150C E ts * E, SWITCHING ENERGY LOS...
Description	600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
File Size	394.61K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4518 IKW25T120
OCR Text	... recovery. 50 30 560 70 2.0 2.2 4.2 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; t...6mJ 5mJ 4mJ 3mJ ) E on and E ts include losses due to diode recovery 10mJ ) Eon and Ets i...
Description	IGBTs & DuoPacks - 25A 1200V TO247 IGBT Diode TRENCHSTOP SERIES
File Size	448.98K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SKP15N60NBSP SKP15N60
OCR Text	...n. 600 1.7 1.2 3 3 Typ. 2 2.3 1.4 1.25 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 1.8 1.65 5 Unit V A 40 2000 100 960 101 62 99 A nC...6mJ ) Eon and Ets include losses due to diode recovery. 1.4mJ Ets 1.2mJ *) Eon and Ets ...
Description	SKP15N60, SKB15N60, SKW15N60 Fast S-IGBT in NPT-Technology From old datasheet system
File Size	299.66K / 14 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
OCR Text	...n. 600 1.7 1.2 3 Typ. 2.0 2.3 1.4 1.25 4 4.2 350 38 23 32 7 60 max. 2.4 2.8 1.8 1.65 5 Unit V A 20 700 100 420 46 28 42 nC nH A nA ...6mJ ) Eon and Ets include losses due to diode recovery. E ts E ts * E, SWITCHING ENERGY...
Description	Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	266.40K / 13 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG] http://
Part No.	IKW15T120 Q67040-S4516
OCR Text	...se recovery. 50 30 520 60 1.3 1.4 2.7 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000;...6mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITC...
Description	IGBTs & DuoPacks - 15A 1200V TO247 IGBT Diode LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT/FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE
File Size	448.19K / 15 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
OCR Text	...Unit V 2.5 3 - 3.1 3.7 4 11 3.6 4.3 5 A 200 800 100 1500 120 80 175 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) ...6mJ 4mJ 2mJ 0mJ 0A E, SWITCHING ENERGY LOSSES Ets* Ets* 4mJ 3mJ Eon* 2mJ Eoff Eoff ...
Description	Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技 IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
File Size	448.47K / 12 Page	View it Online	Download Datasheet

For 4.6mj Found Datasheets File :: 162 Search Time::2.094ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |