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  4-ban Datasheet PDF File

For 4-ban Found Datasheets File :: 3120    Search Time::2.609ms    
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    HMT41GS6MFR8A

Hynix Semiconductor
Part No. HMT41GS6MFR8A
OCR Text ...he-fly: bl 8 or bc (burst chop) 4 ? on die termination (odt) supported ? this product is in compliance with the rohs directive ordering inf...ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge...
Description DDR3L SDRAM

File Size 1,007.69K  /  53 Page

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    M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE6 M470T6554CZ0-CLE7 M470T6554CZ3-CCC M470T6554CZ3-CD5 M470T6554CZ3-CE6 M470T6554CZ3-CE7 M470T6554CZ3-CLCC M470T6554CZ3-CLD5 M470T6554CZ3-CLE6 M470T6554CZ3-CLE7 M470T3354CZX M470T2953CZ0-CCC M470T2953CZ0-CD5 M470T2953CZ0-CE6 M470T2953CZ0-CE7 M470T2953CZ0-CLCC M470T2953CZ0-CLD5 M470T2953CZ0-CLE6 M470T2953CZ0-CLE7 M470T2953CZ3-CCC M470T2953CZ3-CD5 M470T2953CZ3-CE6 M470T2953CZ3-CE7 M470T2953CZ3-CLCC M470T2953CZ3-CLD5 M470T2953CZ3-CLE6 M470T2953CZ3-CLE7 M470T3354CZ0-CCC M470T3354CZ0-CD5 M470T3354CZ0-CE6 M470T3354CZ0-CE7 M470T3354CZ0-CLCC M470T3354CZ0-CLD5 M470T3354CZ0-CLE6 M470T3354CZ0-CLE7 M470T3354CZ3 M470T3354CZ3-CCC M470T3354CZ3-CD5 M470T3354CZ3-CE6 M470T3354CZ3-CE7 M470T3354CZ3-CLCC M470T3354CZ3-CLD5 M470T3354CZ3-CLE6 M470T3354CZ3-CLE7
OCR Text ... Composition 32Mx16(K4T51163QC)*4 32Mx16(K4T51163QC)*4 32Mx16(K4T51163QC)*8 32Mx16(K4T51163QC)*8 64Mx8(K4T51083QC)*16 64Mx8(K4T51083QC)*16 ...BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge c...
Description 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED

File Size 325.88K  /  18 Page

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    M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470T6554CZ0-D5 M470T6554CZ0-E6 M470T3354CZ0-E6 M470T2953CZ0 M470T2953CZ0-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470T6554CZ0-D5 M470T6554CZ0-E6 M470T3354CZ0-E6 M470T2953CZ0 M470T2953CZ0-CC M470T2953CZ0-CD6 M470T2953CZ0-D5 M470T2953CZ0-E6 M470T3354CZ0-CC M470T3354CZ0-CD6 M470T3354CZ0-D5
OCR Text ...x16(K4T51163QC-C(L)D6/E6/D5/CC)*4 32Mx16(K4T51163QC-C(L)D6/E6/D5/CC)*8 64Mx8(K4T51083QC-C(L)D6/E6/D5/CC)*16 Height 30mm 30mm 30mm Not...BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge c...
Description DDR2 Unbuffered SODIMM

File Size 267.92K  /  20 Page

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    HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HYMP112S64MP8-E4 HYMP112S64LMP8-C4 HYMP112S64LMP8-C5 HYMP112S64LMP8-E3 HYMP112S64LMP8-E4 HYMP112S64MP8 HYMP112S64MP8-C4 HYMP112S64MP8-C5 HYMP112S64MP8-E3
OCR Text ...K) Programmable CAS Latency 3 / 4 /5 supported * * Programmable Burst Length 4 / 8 with both sequential and interleave mode Auto refresh and...BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge c...
Description    DDR2 SDRAM SO-DIMM
SCREW LOCKS FEMALE SETS
SCREW LOCKS MALE 128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200

File Size 398.36K  /  17 Page

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    HYNIX[Hynix Semiconductor]
Part No. HYMP564R72P8-E3_C4 HYMP125R72M4-E3 HYMP125R72M4-E3_C4 HYMP125R72MP4-E3 HYMP125R72MP4-E3_C4 HYMP512R724-E3 HYMP512R724-E3_C4 HYMP512R728 HYMP512R728-E3 HYMP512R728-E3_C4 HYMP512R72P4-E3 HYMP512R72P4-E3_C4 HYMP512R72P8-E3 HYMP512R72P8-E3_C4 HYMP512RXXX HYMP564R728-E3 HYMP564R728-E3_C4 HYMP564R72P8-E3
OCR Text ...th SSTL_1.8 interface * * * * * 4 Bank architecture Posted CAS Programmable CAS Latency 3 , 4 , 5 OCD (Off-Chip Driver Impedance Adjustment)...BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge c...
Description 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver.

File Size 591.12K  /  24 Page

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    HYNIX SEMICONDUCTOR INC
Part No. HYMP512U64CP8-S6
OCR Text ...nt licenses are implied. rev. 0.4 / may 2007 ...ban defines the bank to be precharged. if ap is low, autopr echarge is disabled. during a precharge...
Description 128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240

File Size 571.57K  /  30 Page

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    HYNIX[Hynix Semiconductor]
Part No. HYMP564U72P8-E3_C4 HYMP512U648 HYMP512U648-E3 HYMP512U648-E3_C4 HYMP512U64P8-E3 HYMP512U64P8-E3_C4 HYMP512U728-E3 HYMP512U728-E3_C4 HYMP512U72P8-E3 HYMP512U72P8-E3_C4 HYMP512UXXX HYMP532U646-E3 HYMP532U646-E3_C4 HYMP532U64P6-E3 HYMP532U64P6-E3_C4 HYMP564U648-E3 HYMP564U648-E3_C4 HYMP564U64P8-E3 HYMP564U64P8-E3_C4 HYMP564U728-E3 HYMP564U728-E3_C4 HYMP564U72P8-E3
OCR Text ...patible with SSTL_1.8 interface 4 Bank architecture Posted CAS Programmable CAS Latency 3 , 4 , 5 OCD (Off-Chip Driver Impedance Adjustment)...BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge c...
Description 240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.

File Size 434.83K  /  24 Page

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    HYS64T128020EDL HYS64T128020EDL-2.5-B HYS64T128020EDL-3S-B

Qimonda AG
Part No. HYS64T128020EDL HYS64T128020EDL-2.5-B HYS64T128020EDL-3S-B
OCR Text ... Programmable CAS Latencies (3, 4, 5 ), Burst Length (8 & 4). TABLE 1 Performance Table QAG Speed Code DRAM Speed Grade Module Speed Gr...BAn defines the bank to be precharged. If AP is LOW, autoprecharge is disabled. During a Precharge c...
Description 200-Pin Small-Outlined DDR2 SDRAM Modules

File Size 1,367.84K  /  43 Page

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    HMT451S6AFR8C

Hynix Semiconductor
Part No. HMT451S6AFR8C
OCR Text ...he-fly: bl 8 or bc (burst chop) 4 ? on die termination (odt) supported ? this product is in compliance with the rohs directive orde...ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge...
Description DDR3 SDRAM

File Size 1,056.16K  /  55 Page

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    HMT451S6AFR8A

Hynix Semiconductor
Part No. HMT451S6AFR8A
OCR Text ...he-fly: bl 8 or bc (burst chop) 4 ? on die termination (odt) supported ? this product is in compliance with the rohs directive orde...ban defines the bank to be precharged. if ap is low, autoprecharge is disabled. duri ng a precharge...
Description DDR3L SDRAM

File Size 1,079.90K  /  56 Page

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