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FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF6N45
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| OCR Text |
...mum junction temperature 2. L = 39mH, IAS = 3.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating te... |
| Description |
4 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
450V N-Channel MOSFET
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| File Size |
584.51K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRFB4610PBF IRFSL4610PBF IRFS4610PBF
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| OCR Text |
...TJmax, starting TJ = 25C, L = 0.39mH RG = 25, IAS = 44A, VGS =10V. Part not recommended for use above this value. ISD 44A, di/dt 660A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitan... |
| Description |
HEXFET Power MOSFET
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| File Size |
415.07K /
11 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT1204R7KFLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C
APT Reserves the right to change, withou... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
109.65K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT1204R7KFLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See ... |
| Description |
3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
POWER MOS 7 FREDFET
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| File Size |
235.38K /
5 Page |
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it Online |
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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
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| Part No. |
APT1204R7SFLL APT1204R7BFLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C
APT Reserves the right to change, withou... |
| Description |
3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 FREDFET
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| File Size |
116.78K /
4 Page |
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it Online |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT1204R7SFLL APT1204R7BFLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 69.39mH, RG = 25, Peak IL = 3.5A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID3.5A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See ... |
| Description |
POWER MOS 7 FREDFET 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
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| File Size |
238.36K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12057LFLL APT12057B2FLL
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| OCR Text |
...
4 Starting Tj = +25C, L = 12.39mH, RG = 25, Peak IL = 22A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -22A di/dt 700A/s VR 1200 TJ 150C 6 Eon includes diode reverse recovery. See figu... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
164.03K /
5 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT47M60J
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| OCR Text |
.... 2 Starting at TJ = 25C, L = 3.39mH, RG = 2.2, IAS = 33A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as ... |
| Description |
N-Channel MOSFET
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| File Size |
261.07K /
4 Page |
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it Online |
Download Datasheet |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT66M60L APT66M60B2
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| OCR Text |
.... 2 Starting at TJ = 25C, L = 3.39mH, RG = 2.2, IAS = 33A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as ... |
| Description |
N-Channel MOSFET
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| File Size |
384.38K /
4 Page |
View
it Online |
Download Datasheet |
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