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NTE[NTE Electronics]
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| Part No. |
NTE379
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| OCR Text |
... 5V, TC = +100C - - 0.92 0.12 2.3 0.7 s s td tr ts tf VCC = 125V, IC = 8A, IB1 = IB2 = 1.6A, tp = 25s, Duty Cycle 1% - - - - 0.06 0.45 1.3 0.2 0.1 1.0 3.0 0.7 s s s s fT Cob IC = 500mA, VCE = 10V, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz 4 ... |
| Description |
Silicon NPN Transistor Power Amp, High Voltage, Switch
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| File Size |
21.64K /
3 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSN7007F
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| OCR Text |
... na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =3.5a - 1.5 ? forward transconductance g fs v ds =40v,i d =3.5a 5... |
| Description |
700V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
983.25K /
5 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSN7004F
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| OCR Text |
3 ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stabilit...700v(d-s) n-channel enhancement mode power mos fet msn7004f msn7004f lead free pin configuratio... |
| Description |
700V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
920.34K /
5 Page |
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it Online |
Download Datasheet |
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MORE Semiconductor Comp...
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| Part No. |
MSN7002Z
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| OCR Text |
... na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =1.0a - 6.5 ? forward transconductance g fs v ds =40v,i d =1.0a 1... |
| Description |
700V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
674.47K /
4 Page |
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it Online |
Download Datasheet |
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MORE Semiconductor Comp...
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| Part No. |
MSN7002F
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| OCR Text |
... na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =1.0a - 6.5 ? forward transconductance g fs v ds =40v,i d =1.0a 1... |
| Description |
700V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
755.22K /
4 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE231 NTE230
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| OCR Text |
.... . . . . . . . . . . . . . . . 3.2A Surge Current (Note 1), ITSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....700V, TJ = +100C ITM = 20A, TC = +25C TC = -40C VD = 6V, RL = 10 TC = +25C Min - - - - Typ - - - - M... |
| Description |
Silicon Controlled Rectifier (SCR) TV Deflection Circuit
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| File Size |
22.01K /
2 Page |
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it Online |
Download Datasheet |
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