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  2sc2712 Datasheet PDF File

For 2sc2712 Found Datasheets File :: 26    Search Time::1.609ms    
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    SHENZHEN YONGERJIA INDUSTRY CO.,LTD
Part No. 2sc2712
OCR Text p r f - a m p l i f i e r , l o w l e v e l & l o w n o i s e t o 2 s a 1 0 3 7 c o m p l e m e n c o l l e c t o r - c u r r e n t : i c = 1 0 0 m a c o l l e c t o r - e m i l l e r ...
Description NPN EPITAXIAL SILICON TRANSISTOR

File Size 103.23K  /  1 Page

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    C2712

Weitron Technology
Part No. C2712
OCR Text 2sc2712 t r ansition f r equenc y (i c = 1 ma dc , v ce =10 vdc) f t dc c ur r en t g ain (i = 2 ma dc , v ce = 6.0 vdc) c ollec t or-emitt er s a tur a tion v oltage (i c = 100 ma dc , i b = 10ma dc) v ce(sa t) - - 0.1 ...
Description Search --To 2sc2712

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    2SC2712L-X-AL3-R 2SC2712G-X-AL3-R 2SC2712-X-AL3-R 2SC2712G-X-AE3-R 2SC2712-X-AE3-R 2SC2712L-L-AE3-R 2SC2712G-G-AE3-R 2SC

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Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
Part No. 2sc2712L-X-AL3-R 2sc2712G-X-AL3-R 2sc2712-X-AL3-R 2sc2712G-X-AE3-R 2sc2712-X-AE3-R 2sc2712L-L-AE3-R 2sc2712G-G-AE3-R 2sc271209 2sc2712-L-AE3-R
OCR Text 2sc2712 AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise NPN SILICON TRANSISTOR Lead...
Description AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    2SC2712GRTE85L

Toshiba Semiconductor
Part No. 2sc2712GRTE85L
OCR Text 2sc2712 2007-11-01 1 toshiba transistor silicon npn epit axial type (pct process) 2sc2712 audio frequency general purpos e amplifier applications ? high voltage and high current: v ceo = 50 v, i c = 150 ma (max) ? exc...
Description Audio Frequency General Purpose Amplifier Applications

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    Toshiba Corporation
Part No. 2sc2712GRT5LFT 2sc2712-GRTE85LF
OCR Text 2sc2712 2003-03-27 1 toshiba transistor silicon npn epitaxial type (pct process) 2sc2712 audio frequency general purpose amplifier applications high voltage and high current: v ceo = 50 v, i c = 150 ma (max) excell...
Description 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236

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    2SC271207 2SC2712

Toshiba Semiconductor
Part No. 2sc271207 2sc2712
OCR Text 2sc2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2sc2712 Audio Frequency General Purpose Amplifier Applications * * * * * * High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE...
Description Silicon NPN Epitaxial Type (PCT process)

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    2SC2712BL 2SC2712GR 2SC2712Q 2SC2712Y 2SC2712

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Weitron Technology
Part No. 2sc2712BL 2sc2712GR 2sc2712Q 2sc2712Y 2sc2712
OCR Text 2sc2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2sc2712 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc,...
Description Silicon NPN Transistors

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    2SA116207 2SA1162

Toshiba Semiconductor
Part No. 2SA116207 2SA1162
OCR Text ....), 10dB (max) Complementary to 2sc2712 Small package Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power diss...
Description Audio Frequency General Purpose Amplifier Applications

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    2SA116210

SeCoS Halbleitertechnologie GmbH
Part No. 2SA116210
OCR Text ...b(max.) ? complements of the 2sc2712 mechanical data ? case: sot-23, molded plastic ? weight: 0.008 grams(approx.) classification of h fe product-rank 2sa1162-o 2sa1162-y 2sa1162-gr range 70~140 120~240 200~400 ...
Description PNP Silicon General Purpose Transistor

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    Shenzhen Jin Yu Semiconductor Co., Ltd.
Part No. 2SA1162
OCR Text ...b (max.) . complementary to 2sc2712. . small package. marking: so , sy , sg maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter ...
Description TRANSISTOR(PNP)

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