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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
ML1XX22 ML101J22 ML120G22
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| OCR Text |
...ent AlGaInP *High Output Power: 180mw (Pulse) * High Efficiency: 0.95W/A (typ.) * Visible Light: 658nm (typ.) * Low Aspect Ratio ( / //): 1.8 (typ.) * Low Astigmatic Distance: 1m (typ.)
DESCRIPTION
ML1XX22 is semiconductor laser which p... |
| Description |
FOR OPTICAL INFORMATION SYSTEMS
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| File Size |
85.53K /
2 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
OL4128N-140
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| OCR Text |
...20mw po=140mw po=160mw po=180mw po=200mw po=250mw --- --- --- --- --- --- --- --- --- --- --- 1000 500 550 600 700 800 1200 ma operation current (eol) iop (eol) --- --- --- iop(bo... |
| Description |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 光纤变送器
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| File Size |
28.51K /
4 Page |
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it Online |
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Maxim Integrated Products, Inc.
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| Part No. |
MAX3750CEE
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| OCR Text |
... just 190mw for the max3750 and 180mw for the max3751. low 10ps jitter makes these devices ideal for cascaded topologies. the output driver circuitry is tolerant of load mismatches commonly caused by board vias and inductive connectors. on-... |
| Description |
3.3V, 2.125Gbps/1.0625Gbps Fibre-Channel Port Bypass ICs SPECIALTY TELECOM CIRCUIT, PDSO16
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| File Size |
514.10K /
6 Page |
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it Online |
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Price and Availability
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