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For 15.00m Found Datasheets File :: 4971 Search Time::1.766ms
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				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SB1072 2SB1072L 2SB1072S
OCR Text	... Rating -100 -80 -7 -4 4 -8 20 150 -55 to +150 Unit V V V A A A W C C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 2...0m (T C 10 -0.3 -0.1 -0.03 Ta = 25C 1 Shot Pulse s ) =2 C 5 0 50 100 Case tempe...
Description	Silicon PNP Triple Diffused 三重扩散硅进步党
File Size	34.72K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1079
OCR Text	...ngs -100 -100 -7 -20 -30 -3 100 150 -55 to +150 Unit V V V A A A W C C Electrical Characteristics (Ta = 25C) Item Collector to base b...0m 40 0 50 100 Case temperature TC (C) 150 -10 -30 -100 -300 Collector to emitter vol...
Description	Silicon PNP Triple Diffused
File Size	35.32K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SB1091
OCR Text	... Ratings -60 -60 -7 -8 -12 40 150 -55 to +150 Unit V V V A A W C C 2SB1091 Electrical Characteristics (Ta = 25C) Item Symbol Min -...0m DC -1.0 -0.5 -0.2 Ta = 25C -0.1 1 Shot pulse -0.05 s er ati on Op 20 0 50 1...
Description	Silicon PNP Triple Diffused
File Size	34.50K / 6 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	2SB1181 2SB1260 2SB1241
OCR Text	... -5 -1 -2 0.5 PC 2 1 10 Tj Tstg 150 -55~+150 W 2 3 Unit V V V A(DC) A(Pulse) *1 2SB1260 Collector power dissipation 2SB1241, 2SB11...0m =1 PW PW 200 100 50 s 0 =1 ms m 00 =1 PW 00 DC m s s -0.2 -0.1 -0...
Description	Power Transistor
File Size	78.57K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor] http://
Part No.	2SB791 2SB791K
OCR Text	... Rating -120 -120 -7 -8 -12 40 150 -55 to +150 Unit V V V A A W C C 2SB791(K) Electrical Characteristics (Ta = 25C) Item Symbol Min...0m s =2 io n (TC 20 ) 5C Ta = 25C 1 Shot Pulse 0 50 100 Case temperature TC...
Description	Silicon PNP Epitaxial
File Size	36.18K / 6 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	...00 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimen...0m A 60 0m A 10 V B E( sat) 1 -55C (Case Temp) Collector Current I C (A) 8 400m A 8 ...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SD2439
OCR Text	...BO IC IB PC Tj Tstg 2SD2439 160 150 5 10 1 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Audio, Series Regulator and Gene...0m Ma xim um Powe r Dissipation P C( W) s s 60 60 Typ 1 0.5 Without Heatsink Na...
Description	Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)
File Size	24.85K / 1 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	... VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC ) D = 0.50 0.20 The...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	... VDS VGS RD D.U.T. + 150 RG -VDD I D , Drain Current (A) 10V 100 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature (C) ...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...5C T J = 175C 100 200 150 T J = 175C T J = 25C 10 100 1 4.0 5.0 6.0 VDS = 10V 20s PULSE WIDTH 7.0 8.0 9.0 50 VDS = 10V 20s PULSE WIDTH 0 0 40 80 120 160 200 VGS, Gate-to-Source Voltage (V) ID, Drain-t...
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

For 15.00m Found Datasheets File :: 4971 Search Time::1.766ms
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