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  100a 400v Datasheet PDF File

For 100a 400v Found Datasheets File :: 3966    Search Time::1.609ms    
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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...IF = 8.0A --- 3.0 4.5 C di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 300s; duty cycle 2%...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ... 20A VGS = 0V, IS = 20A dIF/dt =100a/s (Note 4) ------ ---530 10.5 20 60 1.4 --- A A V ns C 1. Repetitive Rating: Pulse widt...400v Capacitance [pF] 8 6000 5000 4000 3000 2000 1000 0 -1 10 Coss Notes : 1. VGS = 0 V...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ... 20A VGS = 0V, IS = 20A dIF/dt =100a/s (Note 4) ------ ---530 10.5 20 60 1.4 --- A A V ns C 1. Repetitive Rating: Pulse widt...400v Capacitance [pF] 8 6000 5000 4000 3000 2000 1000 0 -1 10 Coss Notes : 1. VGS = 0 V...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    HGTG20N60B3D G20N60B3 G20N60B3D

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text ... IEC = 20A IEC = 20A, dIEC/dt = 100a/s IEC = 1A, dIEC/dt = 100a/s IGBT Diode VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC...400v VCE = 200V 120 TC = 25oC Ig(REF) = 1.685mA RL = 30 0 20 40 60 QG , GATE CHARGE (nC) 80 12 ...
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
3.3V 36-mc CPLD

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    SGP20N60HS SGW20N60HS

INFINEON[Infineon Technologies AG]
Part No. SGP20N60HS SGW20N60HS
OCR Text ...S SGW20N60HS 80A 70A TC=80C 100a tP=4s IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110C IC, COLLECTOR CURRENT 1...400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description High Speed IGBT in NPT-technology

File Size 429.45K  /  12 Page

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    SKW20N60 Q67040-S4242

INFINEON[Infineon Technologies AG]
Part No. SKW20N60 Q67040-S4242
OCR Text ... 3 Mar-00 SKW20N60 110A 100a 90A 100a Ic tp=4s 15s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A 70A 60A 50A 40A 3...400v, VGE = 0/+15V, RG = 16) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 272.85K  /  14 Page

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    FCP7N60 FCPF7N60

FAIRCHILD[Fairchild Semiconductor]
Part No. FCP7N60 FCPF7N60
OCR Text ... = 7A VGS = 0V, IS = 7A dIF/dt =100a/s (Note 4) ------ ---360 4.5 7 21 1.4 --- A A V ns C 2 FCP7N60 / FCPF7N60 Rev. A www...400v Capacitance [pF] 2000 8 Coss Notes : 1. VGS = 0 V 2. f = 1 MHz 6 1000 Cis...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 799.38K  /  10 Page

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    IRF730APBF

IRF[International Rectifier]
Part No. IRF730APBF
OCR Text ...IF = 3.5A --- 1.6 2.4 C di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF730APbF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Curren...
Description SMPS MOSFET

File Size 180.64K  /  8 Page

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    IRF730A IRF730 IRF730APBF

IRF[International Rectifier]
Part No. IRF730A IRF730 IRF730APBF
OCR Text ...IF = 3.5A --- 1.6 2.4 C di/dt = 100a/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRF730A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V ...
Description 400v Single N-Channel HEXFET Power MOSFET in a TO-220AB package
SMPS MOSFET

File Size 100.63K  /  8 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], ...400v 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GAT...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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For 100a 400v Found Datasheets File :: 3966    Search Time::1.609ms    
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