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2SC5415 MVH26 DF20SC4M 2NSPB ES3BB 09821 B00010 16245A
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    ZXLD1601 LQH31CN100 LB2012Y100MR CMD4D11-100MC

Zetex Semiconductors
Diodes Incorporated
Part No. ZXLD1601 LQH31CN100 LB2012Y100MR CMD4D11-100MC
OCR Text ...TOP VIEW ISSUE 3 - AUGUST 2004 1 SEMICONDUCTORS ZXLD1601 ABSOLUTE MAXIMUM RATINGS (Voltages to GND unless otherwise stated) Input vol...07M 1) PWM output voltage adjustment (analogue mode) During this mode of operation the device ope...
Description LCD and OLED Bias Generator
ADJUSTABLE DC - DC BOOST CONVERTER WITH INTERNAL SWITCH IN SC70

File Size 130.18K  /  12 Page

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    1945-39J 1944-01M 1944-02M 1944-03M 1944-04M 1944-05M 1944-06M 1944-07M 1944-08M 1944-09M 1944-10M 1944-11M 1944-12M 194

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
List of Unclassifed Man...
Part No. 1945-39J 1944-01M 1944-02M 1944-03M 1944-04M 1944-05M 1944-06M 1944-07M 1944-08M 1944-09M 1944-10M 1944-11M 1944-12M 1944-13M 1944-14M 1944-15K 1944-16K 1944-17K 1945-01K 1945-02K 1945-03K 1945-04K 1945-05K 1945-06K 1945-07K 1945-08K 1945-09K 1945-10K 1945-11K 1945-12K 1945-13J 1945-14J 1945-15J 1945-16J 1945-17J 1945-18J 1945-19J 1945-20J 1945-21J 1945-22J 1945-23J 1945-24J 1945-25J 1945-26J 1945-27J 1945-28J 1945-29J 1945-30J 1945-31J 1945-32J 1945-33J 1945-34J 1945-36J 1945-37J 1945-38J 1945-35J
OCR Text ...-36J 1945-37J 1945-38J 1945-39J 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0.10 0.12 0.15 0.18 0.22 0.27 0.33 0.39 0.47 0.56 0.68 0.82 1.00 1.20 1.50 1.80 2.20 20% 20% 20% 20% 20% 20% 20% 20% 20% 20% 20% 20% 20% 20% 10% 10% ...
Description Molded Unshielded RF Coils

File Size 36.05K  /  1 Page

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    DF2S12FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S12FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 0.48+0.02 -0.03 Note: Using continuously under heavy l...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 8.85 to 9.23; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 152.57K  /  3 Page

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    DF2S16FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S16FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 0.48+0.02 -0.03 Note: Using continuously under heavy l...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 130.11K  /  3 Page

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    DF2S24FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S24FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 0.48+0.02 -0.03 Note: Using continuously under heavy l...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.11 to 10.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.23K  /  3 Page

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    DF2S5.6FS

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S5.6FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 0.48+0.02 -0.03 Note: Using continuously under heavy l...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)

File Size 110.34K  /  3 Page

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    DF2S6.2FS

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S6.2FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P* Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 2007-11-01 1.00.05 DF2S6.2FS Guaranteed Level of E...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.10 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 109.90K  /  3 Page

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    DF2S6.8FS

Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S6.8FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 0.48+0.02 -0.03 Note: Using continuously under heavy l...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.60K  /  3 Page

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    DF2S8.2FS

Toshiba Corporation
Toshiba Semiconductor
Part No. DF2S8.2FS
OCR Text ...pace. CATHODE MARK A 0.1 Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg ...07M A 0.2 0.05 0.80.05 0.10.05 2007-11-01 1.00.05 DF2S8.2FS Guaranteed Level of E...
Description Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.74 to 12.24; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).

File Size 110.55K  /  3 Page

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    LTC3100 LTC3100EUD-PBF LTC3100EUD-TRPBF

Linear Technology
Part No. LTC3100 LTC3100EUD-PBF LTC3100EUD-TRPBF
OCR Text 1.5MHz Synchronous Dual Channel DC/DC Converter and 100mA LDO DESCRIPTION The LTC(R)3100 combines a high efficiency 700mA synchronous step-...07M BOOST_GOOD 3V AT 50mA VLDO 2.2F EFFICIENCY (%) 1.87M 10F 2 1M Efficiency and Power Loss vs Lo...
Description 1.5MHz Synchronous Dual Channel DC/DC Converter and 100mA LDO

File Size 408.26K  /  24 Page

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