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  -mosvi Datasheet PDF File

For -mosvi Found Datasheets File :: 103    Search Time::1.015ms    
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    TPC8201

Toshiba Semiconductor
Part No. TPC8201
OCR Text MOSVI) TPC8201 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Low drain-source ON resistance l High forward transfer admittance l Low leakage current l Enhancement-mode : RDS (ON) = 37 m (typ.) : |Yfs| ...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 337.53K  /  7 Page

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    TOSHIBA
Part No. 2SK3667
OCR Text MOSVI) 2SK3667 2SK3667 unit Switching Regulator Applications 100.3 3.20.2 2.70.2 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Sy...
Description MOSFET 2SK/2SJ Series

File Size 97.66K  /  4 Page

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    2SK3667

Toshiba Semiconductor
Part No. 2SK3667
OCR Text MOSVI) 2SK3667 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.75 (typ.) High forward transfer admittance: |Yfs| = 5.5S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth =...
Description    Silicon N Channel MOS Type Switching Regulator Applications

File Size 222.91K  /  6 Page

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    TOSHIBA
Part No. 2SK3767
OCR Text MOSVI) 2SK3767 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = ...
Description MOSFET 2SK/2SJ Series

File Size 231.60K  /  7 Page

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    2SK3767

Toshiba Semiconductor
Part No. 2SK3767
OCR Text MOSVI) 2SK3767 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = ...
Description Silicon N Channel MOS Type Switching Regulator Applications

File Size 225.07K  /  6 Page

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    TOSHIBA
Part No. 2SK3934
OCR Text MOSVI) 2SK3934 Switching Regulator Applications * * * * Low drain-source ON resistance: R DS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: ...
Description MOSFET 2SK/2SJ Series

File Size 75.67K  /  7 Page

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    2SK3934

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3934
OCR Text MOSVI) 2SK3934 Switching Regulator Applications * * * * Low drain-source ON resistance: R DS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| =8.2 S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: ...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-mosvi)
From old datasheet system

File Size 71.01K  /  6 Page

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    2SK3567

Toshiba Semiconductor
Part No. 2SK3567
OCR Text MOSVI) 2SK3567 2SK3567 unit Switching Regulator Applications 100.3 3.20.2 2.70.2 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Sy...
Description TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PIE-mosvi)

File Size 91.51K  /  3 Page

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    2SK3868

Toshiba Semiconductor
Part No. 2SK3868
OCR Text MOSVI) 2SK3868 Switching Regulator Applications * * * * Low drain-source ON resistance: R DS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: V t...
Description MOSFET 2SK/2SJ Series
Switching Regulator Applications

File Size 71.92K  /  6 Page

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    2SK3125

Toshiba Semiconductor
Part No. 2SK3125
OCR Text MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 5.3 m (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 1...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-mosvi) DC-DC Converter, Relay Drive and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-mosvi)

File Size 214.09K  /  6 Page

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