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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP-P8 HY5TQ1G631ZNFP-G6 HY5TQ1G631ZNFP-H7
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| OCR Text |
... vss reset# a13 a14 a8 vss nc n w y aa nc nc nc nc nc nc ab ac nc nc nc nc nc nc 1 2 3 4 5 6 7 8 9 1234 89 567 a b c d e f g h j k l mo-207...undershoot specification. 3. the ac peak noise on v ref may not allow v ref to deviate from v ref(... |
| Description |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82
256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82
64M X 16 DDR DRAM, 0.3 ns, PBGA100
64M X 16 DDR DRAM, 0.255 ns, PBGA100
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| File Size |
771.64K /
75 Page |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S803BTL
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| OCR Text |
...u0 ~ u7 sdram u0 ~ u7 clk2/3 10 w dqn every dqpin of sdram u0/u2 u1/u3 10 w 10 w clk0/1 10 w 10 pf u4/u6 u5/u7 dqm0 dq0 dq1 dq2 dq3 dq4 dq5 ...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
142.45K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S824BTL
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| OCR Text |
...m cs udqm clk2/3 u0/u4 u1/u5 10 w 10 w clk0/1 10 w 10 pf dqm6 cs2 dqm2 dqm3 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u1 dq16 dq17 dq18 dq19 dq20 dq21...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
143.42K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S824BT
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| OCR Text |
... connected to v ss through 47k w resistor. when wp is "high", eeprom programming will be inhibited and the entire memory will be write-pr...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
152.83K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S823BT
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| OCR Text |
... connected to v ss through 47k w resistor. when wp is "high", eeprom programming will be inhibited and the entire memory will be write - ...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
153.21K /
13 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S823BTL
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| OCR Text |
...u0 ~ u7 sdram u0 ~ u7 clk2/3 10 w dqn every dqpin of sdram u0/u2 u1/u3 10 w 10 w clk0/1 10 w 10 pf u4/u6 u5/u7 dqm0 dq0 dq1 dq2 dq3 dq4 dq5 ...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
143.39K /
13 Page |
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it Online |
Download Datasheet |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
KMM366S804BTL
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| OCR Text |
...m cs udqm clk2/3 u0/u4 u1/u5 10 w 10 w clk0/1 10 w 10 pf dqm6 cs2 dqm2 dqm3 dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 u1 dq16 dq17 dq18 dq19 dq20 dq21...undershoot voltage duration is 3ns. 3. any input 0v v in v ddq. input leakage currents ... |
| Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存（8Mx64动态内存模块）
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| File Size |
142.84K /
13 Page |
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it Online |
Download Datasheet |
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Integrated Device Technology, Inc.
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| Part No. |
IDT71V016SA12YG18 IDT71V016SA12YG38 IDT71V016SA12YG48
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| OCR Text |
... o c p t power dissipation 1.25 w i out dc outp ut curre nt 50 ma 6818 tbl 03 grade temperature v ss v dd automotive grade 1 -40c to +125c 0...undershoot diagram below. the measured voltage at device pin should not exceed half sinusoidal wave... |
| Description |
64K X 16 STANDARD SRAM, 12 ns, PDSO44 0.400 INCH, ROHS COMPLIANT, PLASTIC, SOJ-44
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| File Size |
479.11K /
9 Page |
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it Online |
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