|
|
 |
EXXELIA Group
|
Part No. |
CT79A68MK6.3V CT79A68MM6.3V CT79C18UF10125V CT79EB18UF10125V CT79ED68UF20125V CT79A68UF106.3V CT79EB68UF2075V CT79EB68UF1075V CT79EB18UF20125V CT79A68UF206.3V CT79A68UF206V CT79C68UF2075V CT79EA68UF1010V CT79EB68UF2080V CT79A6.8UF1080V CT79EA6.8UF20125V CT79C18UF20125V CT79C68UF1080V CT79C68UF1075V CT79EA18UF1050V CT79EA18UF2050V CT79A6.8UF2080V
|
Description |
CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 6.3 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 125 V, 18 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 125 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 75 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 6 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 10 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 80 V, 68 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 80 V, 6.8 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 125 V, 6.8 uF, THROUGH HOLE MOUNT AXIAL LEADED CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 50 V, 18 uF, THROUGH HOLE MOUNT AXIAL LEADED
|
File Size |
71.65K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
|
|
 |
Silicon Laboratories Inc. Silicon Laboratories, Inc.
|
Part No. |
530CA622M080BG 530CB622M080BG 530CB622M080BGR 530CA622M080BGR 531KA622M080BG 531KA622M080BGR 530KB622M080BG 530KB622M080BGR 531KB622M080BG 530FA622M080BG 530HA622M080BGR 531HA622M080BGR 530FA622M080BGR 531FA622M080BG 531FA622M080BGR 531HB622M080BGR 531JA622M080BGR 531CA622M080BGR 530BA622M080BGR 531JB622M080BG 531BA622M080BGR 531JB622M080BGR 530GB622M080BG 530DB622M080BGR 530FB622M080BGR 530AA622M080BGR 531AA622M080BGR 531DA622M080BG 531DB622M080BG 530EA622M080BG 530DA622M080BG
|
Description |
CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ) 晶体振荡器(XO)(10 MHz.4 GHz CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ) CRYSTAL OSCILLATOR, CLOCK, 622.08 MHz, CMOS/TTL OUTPUT CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ) CRYSTAL OSCILLATOR, CLOCK, 622.08 MHz, LVDS OUTPUT CRYSTAL OSCILLATOR (XO) (10 MHZ TO 1.4 GHZ) CRYSTAL OSCILLATOR, CLOCK, 622.08 MHz, LVPECL OUTPUT
|
File Size |
167.40K /
10 Page |
View
it Online |
Download Datasheet
|
|
|
 |

KOA Speer Electronics,Inc. KOA Speer Electronics, Inc.
|
Part No. |
MF1/4KIT-4 MF11KIT-3 MF1/4KIT-2 MF1BCT521RR20C MF1CCT521RR20C MF1ECT521RR20C MF1GCT521RR20C RK1CCT521AR20C MF1CCT521AR20C MFS1CCT521AR20C RK1CCT521AR20D MF1CCT521AR20D MFS1CCT521AR20D RK1CCT521AR20F MF1CCT521AR20F MFS1CCT521AR20F RK1CCT521AR20G MF1CCT521AR20G MFS1CCT521AR20G RK1CCT521AR20J MF1CCT521AR20J MFS1CCT521AR20J MFS1CCT521RR20C RK1CCT521RR20D MF1CCT521RR20D MFS1CCT521RR20D RK1CCT521RR20F MF1CCT521RR20F MF1/4CCVTEA6490B MF1/4CCVTEA6492B MF1/4CCVTEA6491B MF1/4CCVTEA6493B MF1/4ECVTEA2050B MF1/4CCVTEA2050B MF1/4DCVTEA2050B MF1/4CCVTEA2052B MF1/4DCVTEA2051B MF1/4CCVTEA2053B MF1/4CCVTEA2051B MF1/2CCM12.518R2D MF1/2CCM12.568R1F MF1/2CCM12.518R2F MF1/2CCM12.518R0F MF1/2CCM12.518R7F MF1/2CCM12.538R3F MF1/2CCM12.568R0F MFS1BCT521AR20D MF1BCT521AR20G MF1BCT521AR20J RK1BCT521RR20D MFS1BCT521AR20F RK1BCT521AR20J MFS1BCT521AR20C RK1BCT521AR20D RK1BCT521AR20F MFS1BCT521AR20G MFS1BCT521AR20J MFS1BCT521RR20D RK1BCT521RR20F RK1BCT521AR20G MFS1BCT521RR20C MF1BCT521AR20F MF1BCT521AR20D MF1BCT521AR20C MF1BCT521RR20D MFS1BCT521RR20F MFS1BCT521RR20J MFS1CCT521RR20F MFS1CCT521RR20J MFS1DCT521AR20C MFS1DCT521AR20D MF1BCT521RR20F RK1DCT521RR20D RK1DCT521AR20F RK1DCT521AR20G RK1DCT521AR20J MFS1DCT521
|
Description |
general purpose metal film leaded resistor RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 649 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 64900 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 6490 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 649000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 25 ppm, 205 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 205 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 100 ppm, 205 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 20500 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 100 ppm, 2050 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 205000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.25 W, 0.1 %, 50 ppm, 2050 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 0.5 %, 50 ppm, 18.2 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 68.1 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 18.2 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 18 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 18.7 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 38.3 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.5 W, 1 %, 50 ppm, 68 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
File Size |
107.04K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
 |

意法半导 EEPROM STMicroelectronics N.V.
|
Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
|
Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V HDWR PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
|
File Size |
144.80K /
25 Page |
View
it Online |
Download Datasheet
|
|

Bom2Buy.com

Price and Availability
|