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Vishay
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| Part No. |
SSTPAD100 PAD1 70339
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| OCR Text |
... D Circuit "Transparent" Except to Shunt High-Frequency Spikes D Two-Leaded Package D Simplicity of Operation
Description
The PAD/JPAD/S...226AA (TO-92) Modified
TO-236 (SOT-23)
C 1 3
Case
C C 1
1
C
1 3 A
C 2 A Top ... |
| Description |
Low-Leakage Pico-Amp Diodes
From old datasheet system
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| File Size |
24.21K /
2 Page |
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it Online |
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ON Semi
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| Part No. |
2N6928 ON0072
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| OCR Text |
...n Transistor Triggers
Designed to enable the engineer to "program'' unijunction characteristics such as RBB, , IV, and IP by merely selecti...226AA) CASE 029 STYLE 16
PIN ASSIGNMENT
Anode Gate Cathode
*5.0 "40
-50 to +100 -55 to +150 ... |
| Description |
Prohrammable Unljunctlon Translstor
From old datasheet system
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| File Size |
148.83K /
8 Page |
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it Online |
Download Datasheet |
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Vishay
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| Part No. |
SST112 J111 J113 SST113 J112 70232
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| OCR Text |
to -10 -1 to -5 v-3
SST111 SST112 SST113
rDS(on) Max (W)
30 50 100
ID(off) Typ (pA)
5 5 5
tON Typ (ns)
4 4 4
Features
D D...226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, prov... |
| Description |
N-Channel JFETs
From old datasheet system
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| File Size |
63.18K /
5 Page |
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it Online |
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VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
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| Part No. |
TN3012L
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| OCR Text |
...VGS = 4.5 V
VGS(th) (V)
0.8 to 3
ID (A)
0.18
FEATURES
D D D D D Low On-Resistance: 9 W Secondary Breakdown Free: 320 V Low Power...226AA (TO-92)
S 1 Device Marking Front View "S" TN 3012L xxyy "S" = Siliconix Logo xxyy = Date Code... |
| Description |
Enhancement-Mode MOSFET Transistors
N-Channel 300-V (D-S) MOSFET
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| File Size |
35.37K /
4 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
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| Part No. |
BS250 70209
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| OCR Text |
...14 @ VGS = -10 V VGS(TH) (V) -1 to -2.4 -1 to -2.4 -1 to -3.5 -1 to -3.5 -1 to -3.5 ID (A) -0.18 -0.12 -0.18 -0.12 -0.18
VP0610L VP0610T
...226AA (TO-92)
S 1
TO-92-18RM (TO-18 Lead Form)
D 1 G 1
TO-236 (SOT-23)
3 G 2 G 2 S 2
D... |
| Description |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电45V，夹断电0.18A的P沟道增强型MOSFET晶体
From old datasheet system
P-Ch Enhancement-Mode MOSFET Transistors
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| File Size |
94.52K /
4 Page |
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it Online |
Download Datasheet |
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Vishay Intertechnology,Inc.
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| Part No. |
VP0300LS VP0300L VQ2001P VQ2001J 70217
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| OCR Text |
... VGS = -12 V
VGS(th) (V)
-2 to -4.5 -2 to -4.5 -2 to -4.5 -2 to -4.5
ID (A)
-0.32 -0.5 -0.6 -0.6
FEATURES
D D D D D High-Side Sw...226AA (TO-92)
1
TO-92S
D1 1 2 3 4 5 6 7 14 D4 13 S4 12 G4 11 NC 10 G3 9 8 Top View Plastic: VQ2... |
| Description |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V，夹断电0.6A的P沟道增强型MOSFET)
From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors
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| File Size |
71.24K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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