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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F-F1L K4S283233F-F60 K4S283233F-F75 K4S283233F-FE K4S283233F-FHE K4S283233F-G K4S283233F-L K4S283233F-N K4S283233F-FF600
OCR Text	...rt. -. PASR (Partial Array Self refresh). -. Internal TCSR (Temperature Compensated Self refresh) * DQM for masking. * Auto refresh. * * * * 64ms refresh period (4k cycle). Commercial Temperature Operation (-25C ~ 70C). Extended Temperature...
Description	4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
File Size	138.69K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF-FR60 K4S28323LF-HER75 K4S28323LF-NR1L K4S28323LF-FR750 K4S28323LF-FS750
OCR Text	...rt. -. PASR (Partial Array Self refresh). -. Internal TCSR (Temperature Compensated Self refresh) * DQM for masking. * Auto refresh. * * * * 64ms refresh period (4k cycle). Commercial Temperature Operation (-25C ~ 70C). Extended Temperature...
Description	4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
File Size	139.21K / 12 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_L1L K4S641632C-TC_L60
OCR Text	...ion DQM for masking Auto & self refresh 64ms refresh period (4k cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S641632C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated wi...
Description	1M x 16Bit x 4 Banks Synchronous DRAM
File Size	778.45K / 42 Page	View it Online	Download Datasheet

				SAMSUNG
Part No.	KM416S1020 KM416S1020CT-F10
OCR Text	...200 mV. * Bining -7 is added. * refresh cycle changed 2K/32ms to 4k/64ms. * AC Operating Condition is changed as defined : - VIH(max) = 5.6V AC. The overshoot voltage duration is 3ns. - VIL(min) = -2.0V AC. The undershoot voltage duration ...
Description	1M x 16 SDRAM
File Size	1,093.83K / 43 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KM44S32030B KM44S32030BT-G_F10 KM44S32030BT-G_F8
OCR Text	...* DQM for masking * Auto & self refresh * 64ms refresh period (4k Cycle) CMOS SDRAM GENERAL DESCRIPTION The KM44S32030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits, fabricated...
Description	128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	90.36K / 11 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KM44S32030
OCR Text	...* DQM for masking * Auto & self refresh * 64ms refresh period (4k cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM44S32030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits,...
Description	8M x 4Bit x 4 Banks Synchronous DRAM
File Size	77.33K / 10 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KMM5368003BSWG KMM5368003BSW
OCR Text	refresh, 5V GENERAL DESCRIPTION The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B con...4k cycles/64ms Ref, TSOP, Solder) - KMM5368003BSWG(4k cycles/64ms Ref, TSOP, Gold) * Fast Page Mode ...
Description	8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4k refresh, 5V
File Size	357.22K / 18 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	M464S1724CT1 M464S1724CT1-C1H M464S1724CT1-C1L M464S1724CT1-L1H
OCR Text	refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M464S1724CT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S1724CT1 consists of eight CMOS 8M x 16 bit with 4banks Synchronous ...
Description	16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4k refresh,3.3V Synchronous DRAMs with SPD
File Size	97.13K / 9 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp Mosel Vitelic, Corp
Part No.	V54C316162V V54C316162 V54C316162V-55 V54C316162V-5 V54C316162V-6 V54C316162V-7
OCR Text	refresh ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 s JEDEC Standard 3.3V Power Supply s The V54C316162V is ideally suite...4k refresh Cycles/64 ms s Burst Read with Single Write Operation CILETIV LESOM V54C316162V Cloc...
Description	200/183/166/143 MHz 3.3 VOLT, 4k refresh ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
File Size	147.98K / 21 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT46V16M8
OCR Text	...Precharge option supported Auto refresh and Self refresh Modes t RAS lockout (tRAP = tRCD) MT46V16M8 - 4 Meg x 8 x 4 banks For the lates...4k 4k (A0-A11) 4 (BA0, BA1) 1K (A0-A9) * Configuration 16 Meg x 8 (4 Meg x 8 x 4 banks) * Plastic...
Description	DOUBLE DATA RATE DDR SDRAM
File Size	131.79K / 9 Page	View it Online	Download Datasheet

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