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Infineon
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| Part No. |
SBH51414X SBH51414
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| OCR Text |
...ent, VR = 2 V, e = 0, TC = 85 C photocurrent, VR = 2 V, e = 1 mW Capacitance, VR = 2 V, f = 1 MHz Tracking error, VR = 2 V (see note 1) Detector Dark current, VR = 2 V, e = 0, TC = 85 C Spectral sensitivity, VR = 2 V, = 1550 nm Capacitanc... |
| Description |
BIDI TM Transceiver Optical Module 1300 nm Emitting-/1550 nm Receiving Function, High Power
From old datasheet system
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| File Size |
138.39K /
7 Page |
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it Online |
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Infineon
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| Part No. |
SBL51414X SBL51414 SBL51414RE9466
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| OCR Text |
...ent, VR = 2 V, e = 0, TC = 85 C photocurrent, VR = 2 V, e = 0.2 mW Capacitance, VR = 2 V, f = 1 MHz Tracking error, VR = 2 V (see note 1) Detector Dark current, VR = 2 V, e = 0, TC = 85 C Spectral sensitivity, VR = 2 V, = 1550 nm, Capacita... |
| Description |
BIDI Transceiver Optical Module
From old datasheet system
BIDI TM Transceiver Optical Module 1300 nm Emitting/1550 nm Receiving Function,Low Power
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| File Size |
139.15K /
7 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
SFH3401 Q62702-P5014
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| OCR Text |
...m der Kollektor-Basis Fotodiode photocurrent of collector-base photodiode Ee = 0.1 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Symbol Symbol S max Wert Value 850 Einheit Unit nm
460 ... 1080 nm
A LxB LxW H ... |
| Description |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
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| File Size |
45.41K /
6 Page |
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it Online |
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Vishay Semiconductors
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| Part No. |
IL203
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| OCR Text |
...rature fig. 9 - collector base photocurrent vs. led current fig. 10 - normalized photocurrent vs. i f and temperature fig. 11 - normalized saturated h fe vs. base current and temperature fig. 12 - propagation delay vs. collector load... |
| Description |
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP
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| File Size |
144.18K /
6 Page |
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it Online |
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GPD OPTOELECTRONICS CORP
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| Part No. |
GM4
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| OCR Text |
... detector. responsivity (r) the photocurrent output per unit incident radiant power, usually at a specified wavelength. noise equivalent power (nep) the incident radiant power that creates a signal- to-noise ratio of one at the photodetecto... |
| Description |
PHOTO DIODE
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| File Size |
392.68K /
12 Page |
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it Online |
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