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  p-1db Datasheet PDF File

For p-1db Found Datasheets File :: 6072    Search Time::1.188ms    
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    LX5543

Microsemi Corporation
Part No. LX5543
OCR Text p roduction d ata s heet microsemi analog mixed signal group 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 ...1db gain compression point (ip 1db ) of +25dbm. bluetooth path of lx5543 features insertion loss 0.9...
Description 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier and SP3T Switch

File Size 86.17K  /  3 Page

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    Infineon Technologies
Part No. PTFA181001F
OCR Text ...= 1880 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -53 -48 -43 -38 -33 -28 -23 34 36 38 40 42 44 46 average output power (...1db = 120 w - gain 15.5 db - efficiency = 52% ? integrated esd protection: human body model, class 2...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 416.43K  /  11 Page

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    HMC668LP3 HMC668LP3E

Hittite Microwave Corporation
http://
Part No. HMC668LP3 HMC668LP3E
OCR Text ...+3v or +5v 16 l ead 3x3mm q fn p ackage: 9 mm 2 typical applications the h m c668 lp 3( e ) is ideal for: ? cellular/3g and l t e / w i m ...1db compression ( p 1db) [1] 13 13 22 24 dbm third o rder i ntercept ( ip 3) [2] 27 33 26 26 dbm ...
Description GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz

File Size 434.33K  /  10 Page

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    Excelics Semiconductor
Part No. EIC7179-8
OCR Text ...onditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma ...
Description Internally Matched Power FET

File Size 200.63K  /  4 Page

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    Excelics Semiconductor
Part No. EIC7179-5
OCR Text ...onditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 1600ma 36.5 37.5 dbm g 1db gain at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 1600ma ...
Description Internally Matched Power FET

File Size 207.88K  /  4 Page

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    Excelics Semiconductor
Part No. EIC7179-4
OCR Text ...onditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 1100ma 35.5 36.5 dbm g 1db gain at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 1100ma ...
Description Internally Matched Power FET

File Size 204.59K  /  4 Page

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    Excelics Semiconductor
Part No. EIC7177-10
OCR Text ...onditions 1 min typ max units p 1db output power at 1db compression f = 7.10-7.70ghz v ds = 10 v, i dsq 3200ma 39.5 40.5 dbm g 1db gain at 1db compression f = 7.10-7.70ghz v ds = 10 v, i dsq 3200ma ...
Description Internally Matched Power FET

File Size 177.57K  /  4 Page

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    HMC547LC3

Hittite Microwave Corporation
Part No. HMC547LC3
OCR Text ... his pin should be connected to p c b rf ground to maximize isolation 2, 4, 6, 8, 13, 15 gnd package bottom has exposed metal paddle that must also be connected to p c b rf ground. 3, 7, 14 rf c , rf1, rf2 this pin is dc coupled and matche...
Description GaAs MMIC SPDT NON-REFLECTIVE SWITCH, DC - 28.0 GHz

File Size 438.86K  /  6 Page

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    JRC
Part No. NJG1717KT2
OCR Text ...@ f rf =1900mhz, f lo =1660mhz, p lo =-15dbm low noise figure 2.6db typ. @ f rf =1900mhz, f lo =1660mhz, p lo =-15dbm high in...1db gain compression point p -1db tx +19 +21 - dbm adjacent channel leak power ratio1 acp...
Description PA SPDT SW LNA Mixer / QFN24-T2

File Size 585.20K  /  27 Page

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For p-1db Found Datasheets File :: 6072    Search Time::1.188ms    
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