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  overlaytm Datasheet PDF File

For overlaytm Found Datasheets File :: 347    Search Time::1.297ms    
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    STMicroelectronics N.V.
意法半导
Part No. STP9NB50FP STP9NB50 5368
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Description N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowerMESHTM MOSFET的(不适用沟道增强模式MOSFET的)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET

File Size 114.88K  /  9 Page

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    STU16NB50 6768

http://
STMicroelectronics
SGS Thomson Microelectronics
Part No. STU16NB50 6768
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N-CHANNEL 500V - 0.28ohm - 15.6A-Max220 PowerMESH MOSFET
From old datasheet system
N-CHANNEL 500V - 0.28 - 15.6A-Max220 PowerMESH TM MOSFET
N-CHANNEL 500V - 0.28W - 15.6A-Max220 PowerMESH MOSFET

File Size 48.58K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STW14NB50 6555
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N-CHANNEL 500V - 0.40 ohm - 14A - TO-247 PowerMESH MOSFET
From old datasheet system
N-CHANNEL 500V - 0.40 - 14A - TO-247 PowerMESH TM MOSFET

File Size 49.78K  /  5 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STW8NB100 6509
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2 - 8A - TO-247 PowerMESH TM MOSFET

File Size 49.65K  /  5 Page

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    STB6NB50 STB6NB50-1

STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
Part No. STB6NB50 STB6NB50-1
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 5.8AI(四)|62AA
N-CHANNEL Power MOSFET
N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET

File Size 91.62K  /  9 Page

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    STP2HNC60FP STP2HNC60

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP2HNC60FP STP2HNC60
OCR Text ...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description N-CHANNEL 600V 4 OHM 2.2A TO-220/TO-220FP POWERMESH II MOSFET
N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh⑩II MOSFET
N-CHANNEL 600V 4 OHM 2.2A TO-220/TO-220FP POWERMESH II MOSFET
N-CHANNEL 600V - 4ohm - 2.2A TO-220/TO-220FP PowerMesh?II MOSFET

File Size 326.61K  /  9 Page

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    STP80NS04Z

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
http://
Part No. STP80NS04Z
OCR Text overlaytm MOSFET TYPE STP80NS04Z s s s s V DSS R DS(on) ID 80 A CLAMPED <0.008 TYPICAL RDS(on) = 0.0075 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175 oC MAXIMUM JUNCTION TEMPERATURE 3 1 2 DESCRIPTION This ...
Description N - CHANNEL CLAMPED 7.5mOhm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET

File Size 89.69K  /  8 Page

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    STS1C1S250

STMICROELECTRONICS[STMicroelectronics]
Part No. STS1C1S250
OCR Text ...s proprietary high voltage MESH overlaytm process based on advanced strip layout and efficient edge termination. Designed for high volume manufacturing capability, it is ideal in lighting converters such as CFL supplied from 120V mains. ...
Description N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET

File Size 446.00K  /  10 Page

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    ??????浣?
意法半导
ST Microelectronics
Part No. IRFP250
OCR Text ...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description N-CHANNEL MOSFET0
N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET
N-CHANNEL 200V 0.073 OHM 33A TO-247 POWERMESH II MOSFET

File Size 254.72K  /  8 Page

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    IRFP450 6068 -IRFP450

STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
Part No. IRFP450 6068 -IRFP450
OCR Text ...lidated strip layout-based MESH overlaytm process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC C...
Description N-Channel 500V-0.33惟-14A- TO-247 PowerMESHTM MOSFET(N娌??MOSFET)
N-Channel 500V-0.33Ω-14A- TO-247 PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.33Ω- 14A条至247 PowerMESHTM MOSFET的(不适用沟道MOSFET的)
N-Channel 500V-0.33Ω-14A- TO-247 PowerMESHTM MOSFET(N沟道MOSFET)
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET
From old datasheet system
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH MOSFET

File Size 89.75K  /  8 Page

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For overlaytm Found Datasheets File :: 347    Search Time::1.297ms    
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