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Execlics
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Part No. |
EFA040A-70
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OCR Text |
...z 0.3 x 400 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability electrical characteristics (t a = 25 o c) sym... |
Description |
Low Distortion GaAs Power FET
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File Size |
48.30K /
2 Page |
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Execlics
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Part No. |
EFA060B-70
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OCR Text |
...z 0.3 x 600 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability electrical characteristics (t a = 25 o c) sym... |
Description |
Low Distortion GaAs Power FET
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File Size |
48.31K /
2 Page |
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it Online |
Download Datasheet |
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Execlics
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Part No. |
EFA072A
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OCR Text |
... 0.3 x 720 micron recessed ?mushroom? gate si 3 n 4 passi vation advanced epitaxial doping profile provides high power efficiency, linearity and reliability idss sorted in 15ma per bin rang... |
Description |
Low Distortion GaAs Power FET
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File Size |
55.38K /
2 Page |
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it Online |
Download Datasheet |
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Execelies
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Part No. |
EFA080A
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OCR Text |
...z 0.3 x 800 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides high power efficiency, linearity and reliability idss sorted in 15ma per bin range electric... |
Description |
Low Distortion GaAs Power FET
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File Size |
149.59K /
2 Page |
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it Online |
Download Datasheet |
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Electronic Theatre Controls, Inc.
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Part No. |
EPB025A
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OCR Text |
...z 0.3 x 250 micron recessed mushroom gate si 3 n 4 passivation advanced epitaxial doping profile provides super low noise, high gain and high reliability idss sorted in 5ma per bin range electrical characteristics ... |
Description |
Low Noise High Gain Heterojunction FET
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File Size |
19.84K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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