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IRF[International Rectifier]
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| Part No. |
IRHYS67230CM IRHYS63230CM
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.83 [.190] 0.13 [.005] 1.14 [.045] 0.89 [.035... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
186.27K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHYS67234CM IRHYS63234CM
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
A Total Dose Irradiation with VDS Bias.
Case Outline and Dimensions -- Low-Ohmic TO-257AA
A 10.66 [.420] 10.42 [.410] 3X O 3.81 [.150] 3.56 [.140] 5.08 [.200] 4.8... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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| File Size |
188.86K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test condition... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
298.46K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
RHN7150
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| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and figure 8a and a VDSS bias condition equal to 80% of the device rated voltage per note 7 an... |
| Description |
TRANSISTOR N-CHANNEL
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| File Size |
452.79K /
14 Page |
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