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id-6.8a Datasheet PDF File

For id-6.8a Found Datasheets File :: 3817 Search Time::1.875ms
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				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	CPH6306
OCR Text	...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2x0.8mm) Conditions 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 0.7 0.9 0.2 Ratings -60 20 -1.8...
Description	Ultrahigh-Speed Switching Applications
File Size	40.90K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS9933A
OCR Text	...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwi...6 1.0 0.9 -55 to +150 C TJ, Tstg Operating and Storage Junction Temperature Range Thermal C...
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
File Size	190.13K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7103 IRF7103TR IRF7103N
OCR Text	...7 VDSS = 50V RDS(on) = 0.130 ID = 3.0A 3 6 4 5 Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon...
Description	Power MOSFET(Vdss=50V/ Rds(on)=0.130ohm/ Id=3.0A) Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A) 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
File Size	165.28K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	RFD3055LE RFD3055LESM RFP3055LE RFD3055
OCR Text	.... . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....6.2 0.43 3.94 62 100 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W oC/W Drain ...
Description	11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs 11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs
File Size	412.10K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STB6LNC60
OCR Text	ID 5.8 A TYPICAL RDS(on) = 1.0 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ...6 830 120 15.5 Max. Unit S pF pF pF 2/9 STB6LNC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWIT...
Description	N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh⑩II MOSFET N沟道600V 1ohm - 5.8A D2PAK封装MOSFET的第二PowerMesh N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMeshII MOSFET N-CHANNEL 600V - 1ohm - 5.8A D2PAK PowerMesh?II MOSFET
File Size	420.96K / 9 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
Part No.	STB6NB50 STB6NB50-1
OCR Text	...DSS 500 V R DS(on) < 1.5 ID 5.8 A TYPICAL RDS(on) = 1.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC...6 Unit A A V ns C A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited b...
Description	FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 5.8AI（四）\|62AA N-CHANNEL Power MOSFET N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
File Size	91.62K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics 意法半导 ST Microelectronics
Part No.	STB6NB90 6439
OCR Text	...DSS 900 V R DS(on) < 2.0 ID 5.8 A TYPICAL RDS(on) = 1.7 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC ...6 23 135 1.08 4.5 -65 to 150 150 Unit V V V A A A W W/ o C V/ns o o C C (*) Limited only by m...
Description	N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET From old datasheet system N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET N-CHANNEL Power MOSFET
File Size	47.53K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STB6NK90Z STB6NK90ZT4 STP6NK90ZFP STP6NK90Z STW7NK90Z
OCR Text	... V 900 V RDS(on) <2 <2 <2 ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.56 EXTREMELY HIGH dv/dt CAPABILIT...6 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width li...
Description	N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH?Power MOSFET N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET N沟道900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK齐保护的SuperMESH⑩功率MOSFET N-CHANNEL 900V 1.56 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 900V - 1.56ohm - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESHPower MOSFET N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH Power MOSFET N-channel 900V - 1.56Ω - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH?/a> Power MOSFET N-channel 900V - 1.56ヘ - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH⑩ Power MOSFET
File Size	586.82K / 12 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD2NC50 STD2NC50-1 STD2NC50T4
OCR Text	...500 V 500 V RDS(on) <4 <4 ID 2.2 A 2.2 A TYPICAL RDS(on) = 3 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAG...6 Unit A A V ns nC A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width li...
Description	N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V 3OHM 2.2A DPAK/IPAK POWERMESH II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMeshII MOSFET N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh?II MOSFET
File Size	442.76K / 10 Page	View it Online	Download Datasheet

For id-6.8a Found Datasheets File :: 3817 Search Time::1.875ms
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