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  id-4.0a Datasheet PDF File

For id-4.0a Found Datasheets File :: 5401    Search Time::2.219ms    
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    SMCG24 SMCG24A SMCJ5.0 SMCJ60 SMCJ60A SMCJ78 SMCJ160A SMCJ64A SMCJ36 SMCJ75 SMCJ54 SMCG40 SMCG20A SMCJ100 SMCJ100A SMCG4

GE Security, Inc.
GE[General Semiconductor]
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Part No. SMCG24 SMCG24A SMCJ5.0 SMCJ60 SMCJ60A SMCJ78 SMCJ160A SMCJ64A SMCJ36 SMCJ75 SMCJ54 SMCG40 SMCG20A SMCJ100 SMCJ100A SMCG45A SMCG43A SMCG54A SMCG85 SMCG85A SMCJ36A SMCJ24 SMCJ58A SMCJ150 SMCJ26A SMCJ26 SMCG5.0 SMCJ16A SMCG5.0A SMCG51 SMCG51A SMCG54 SMCG13 SMCJ78A SMCJ48 SMCJ51 SMCJ90A SMCG SMCG10 SMCG100 SMCG100A SMCG10A SMCG11 SMCG110 SMCG110A SMCG11A SMCG12 SMCG120 SMCG120A SMCG12A SMCG130 SMCG130A SMCG13A SMCG14 SMCG14A SMCG15 SMCG150 SMCG150A SMCG15A SMCG16 SMCG160 SMCG160A SMCG16A SMCG17 SMCG170 SMCG170A SMCG17A SMCG18 SMCG18A SMCG22 SMCG22A SMCG26 SMCG26A SMCG28 SMCG28A SMCG30 SMCG30A SMCG33 SMCG33A SMCG36 SMCG36A SMCG40A SMCG43 SMCG45 SMCG48 SMCG48A SMCG58 SMCG58A SMCG6.0 SMCG6.0A SMCG6.5 SMCG60 SMCG60A SMCG64 SMCG64A SMCG7.0 SMCG7.0A SMCG7.5 SMCG7.5A SMCG70 SMCG70A SMCG75 SMCG75A SMCG78 SMCG78A SMCG8.0 SMCG8.0A SMCG8.5 SMCG8.5A SMCG9.0 SMCG9.0A SMCG90 SMCG90A SMCJ10 SMCJ10A SMCJ11 SMCJ110 SMCJ110A SMCJ11A SMCJ12 SMCJ120 SMCJ120A SMCJ12A SMCJ13 SMCJ130 SMCJ130A SMCJ13A SMCJ14 SMCJ14A SMCJ15 SMCJ150A SMCJ15A SMCJ16 SMCJ160 SMCJ17 SMCJ170 SMCJ170A SMCJ17A SMCJ18 SMCJ18A SMCJ20 SMCJ20A SMCJ22 SMCJ22A SMCJ24A SMCJ28 SMCJ28A SMCJ30 SMCJ30A SMCJ33 SMCJ33A SMCJ40 SMCJ40A SMCJ43 SMCJ4
OCR Text ...pes For devices with V(BR)10V, ID are typically less than 1.0A High temperature soldering guaranteed: 250C/10 seconds at terminals 0.12...4 10.0 / 12.2 10.0 / 11.1 11.1 / 13.6 11.1 / 12.3 12.2 / 14.9 12.2 / 13.5 13.3 / 16.3 13.3 / 14.7 14...
Description SURFACE MOUNT TRANSZORB?/a> TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORBTRANSIENT VOLTAGE SUPPRESSOR 表面贴装TRANSZORB⑩瞬态电压抑制器
CMOS Hex Inverter 14-CDIP -55 to 125
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 450V; Case Size: 35x50 mm; Packaging: Bulk
INDUCTEL SENSOR RS 485-232
CMOS 12-Stage Ripple-Carry Binary Counter/Divider 16-SOIC -55 to 125
Replaced by CD4020B : CMOS 14-Stage Ripple-Carry Binary Counter/Divider 16-CDIP -55 to 125
SURFACE MOUNT TRANSZORB垄芒 TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORB?/a> TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORB??TRANSIENT VOLTAGE SUPPRESSOR
SURFACE MOUNT TRANSZORB?TRANSIENT VOLTAGE SUPPRESSOR

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    IRF730

Dc Components
Part No. IRF730
OCR Text ...S = 400 Volts RDS(ON) = 1.0 Ohm ID = 5.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements TO-220AB .185(4.70) .173(4.40) .055(1.39) .045(1.15) .295(7.49) .220(5.58) .62...
Description TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET

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    VP2206 VP2206N2 VP2206N3

Supertex, Inc
Part No. VP2206 VP2206N2 VP2206N3
OCR Text ID(ON) (min) -4A Order Number / Package TO-39 VP2206N2 TO-92 VP2206N3 MIL visual screening available High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Tec...
Description P-Channel Enhancement-Mode Vertical DMOS FETs

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    AO4912 AO4912L

Alpha & Omega Semiconductors
Part No. AO4912 AO4912L
OCR Text .... Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17m RDS(ON) < 25m Q2 VDS(V) = 30V ID=7A (VGS = 10V) <26m (VGS = 10V) <31m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

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    2SK3668

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SK3668
OCR Text ... TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A) +0.2 8.7-0.2 Gate voltage rating: 30 V Low on-state resistance RDS(on) = 0.55 MAX. (V...4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage ...
Description MOS Field Effect Transistor

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    AO7408 AO7408L

Alpha & Omega Semiconductors
Part No. AO7408 AO7408L
OCR Text ...cal. Features VDS (V) = 20V ID = 2.2 A (VGS = 4.5V) RDS(ON) < 82m (VGS = 4.5V) RDS(ON) < 95m (VGS = 2.5V) RDS(ON) < 120m (VGS = 1.8V) SC-70-6 (SOT-323) Top View D D G D D S D G S Absolute Maximum Ratings TA=25C unless otherw...
Description N-Channel Enhancement Mode Field Effect Transistor

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    FW245

SANYO[Sanyo Semicon Device]
Part No. FW245
OCR Text ...ge Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 0.595 1.27 0.43 0.1 1.8max 1 4 0.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Rating...
Description DC / DC Converter Applications

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    IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFW630 IRFW630B IRFI630 IRFI630B IRFI630BTUFP001
OCR Text ...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...4.5 A VDS = 40 V, ID = 4.5 A (Note 4) 2.0 --- -0.34 7.05 4.0 0.4 -- V S Dynamic Cha...
Description 200V N-Channel B-FET / Substitute of IRFI630A
200V N-Channel MOSFET

File Size 646.27K  /  9 Page

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    FDS2734

Fairchild Semiconductor
Part No. FDS2734
OCR Text ... Max rDS(on) =117m at VGS =10V, ID = 3.0A Max rDS(on) =126m at VGS = 6V, ID = 2.8A Fast switching speed High performance trench low rDS(on) ...4 3 2 1 Pin 1 S S S G 7 8 MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, ...
Description N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm

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    CHM2305PT

Chenmko Enterprise Co. Ltd.
Part No. CHM2305PT
OCR Text ...us -30 V V 12 -4.0 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 15 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 301.62K  /  3 Page

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