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For gs s Found Datasheets File :: 32477 Search Time::1.391ms
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				HITACHI[Hitachi Semiconductor] http://
Part No.	2sJ550 2sJ550L 2sJ550s
OCR Text	...= 75C -4 25C -25C -1 -2 -3 -4 V gs (V) -5 0 Drain to source Voltage Gate to source Voltage 3 2sJ550(L),2sJ550(s) Drain to source saturation Voltage vs. Gate to source Voltage static Drain to source on state Resistance vs. Dr...
Description	Power switching MOsFET silicon P Channel MOs FET High speed Power switching
File Size	55.48K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ551 2sJ551L 2sJ551s
OCR Text	...te to source Voltage -4 -5 V gs (V) 3 2sJ551(L),2sJ551(s) Drain to source saturation Voltage vs. Gate to source Voltage Drain to source saturation Voltage V Ds(on) (V) Pulse Test -2.5 -2.0 -1.5 -1.0 -0.5 I D = -20 A -10 A -...
Description	silicon P Channel MOs FET High speed Power switching
File Size	54.47K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ552 2sJ552L 2sJ552s 2sJ552L/s
OCR Text	...te to source Voltage -4 -5 V gs (V) 3 2sJ552(L),2sJ552(s) Drain to source saturation Voltage vs. Gate to source Voltage Drain to source saturation Voltage V Ds(on) (V) Pulse Test Drain to source On state Resistance R Ds(on)...
Description	silicon P-Channel MOs FET silicon P Channel MOs FET High speed Power switching Power switching MOsFET
File Size	55.15K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ553 2sJ553L 2sJ553s
OCR Text	... Gate to source Voltage -4 -5 V gs (V) -10 -2.5 V -2 V -10 0 -2 -4 -6 Drain to source Voltage -8 -10 V Ds (V) 3 2sJ553(L),2sJ553(s) Drain to source saturation Voltage vs. Gate to source Voltage Drain to source On s...
Description	Power switching MOsFET silicon P Channel MOs FET High speed Power switching
File Size	55.75K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ554
OCR Text	... Gate to source Voltage -4 -5 V gs (V) -10 -2.5 V -2 V -10 0 -2 -4 -6 Drain to source Voltage -8 -10 V Ds (V) 3 2sJ5...s) static Drain to source on state Resistance vs. Temperature 0.1 100 30 Forward Transfer A...
Description	silicon P Channel MOs FET High speed Power switching
File Size	53.62K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2sJ555
OCR Text	... Gate to source Voltage -4 -5 V gs (V) 3 2sJ555 Drain to source saturation Voltage vs. Gate to source Voltage -2 Drain to source sat...s) static Drain to source on state Resistance vs. Temperature 50 -20 A 100 30 10 3 1 0.3 Fo...
Description	silicon P Channel MOs FET High speed Power switching
File Size	52.90K / 9 Page	View it Online	Download Datasheet

				Xian Semipower Electronic Technology Co., Ltd.
Part No.	sW1N55D
OCR Text	... r ds( on ) (max6.5 ? )@v gs =10v gate charge (typical 7 nc) improved dv/dt capability 100% avalanche tested n - c...s dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 182 ...
Description	N-channel IPAK MOsFET
File Size	500.82K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	sTW13NK100Z
OCR Text	...it v ds drain-source voltage (v gs = 0) 1000 v v dgr drain-gate voltage (r gs = 20k ? ) 1000 v v gs gate-source voltage 30 v i d drain cu...s) gate source esd(hbm-c=100pf, r=1,5k ? ) 6000 v dv/dt (2) 2. i sd 8.3 a, di/dt 200a/s, v ...
Description	13 A, 1000 V, 0.7 ohm, N-CHANNEL, si, POWER, MOsFET, TO-247AC
File Size	293.60K / 14 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2sJ575
OCR Text	...n-resistance R Ds =2.8 typ. (V gs = -10 V , I D = -50 mA) R Ds =5.7 typ. (V gs = -4 V , ID = -50 mA) * 4 V gate drive device. * small pack...s 1 2sJ575 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source volt...
Description	silicon P Channel MOs FET High speed switching
File Size	38.55K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	sTD35N10 sTU35N10
OCR Text	gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 100v 35a 21 ...s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) w p d c -55 to 150 t c =25 c thermal characteristic...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	125.89K / 10 Page	View it Online	Download Datasheet

For gs s Found Datasheets File :: 32477 Search Time::1.391ms
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