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For gps Found Datasheets File :: 5788 Search Time::1.437ms
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				Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	D1028UK D1028
OCR Text	...ch 0.1 V TOTAL DEVICE gps Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance h PO = 300W VDS = 28V f = 175MHz IDQ = 2A 13 60 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = ...
Description	Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽) METAL GATE RF SILICON FET
File Size	125.76K / 7 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] http:// Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
Part No.	MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD-T MAX6744 MAX6744XKD-T MAX6745XKD-T MAX6736 MAX6736XKD-T MAX6737XKD-T MAX6738XKD-T MAX6739XKD-T MAX6737 MAX6738 MAX6736XKL MAX6736XKM MAX6736XKR MAX6736XKS MAX6736XKT MAX6736XKV MAX6736XKW MAX6736XKY MAX6736XKZ MAX6737XKL MAX6737XKM MAX6737XKR MAX6737XKS MAX6737XKT MAX6737XKV MAX6737XKW MAX6737XKY MAX6737XKZ MAX6740XKL MAX6740XKM MAX6740XKR MAX6740XKS MAX6740XKT MAX6740XKV MAX6740XKW MAX6740XKY MAX6740XKZ MAX6745XKZD7-T MAX6738XKLD3-T MAX6738XKLD7-T MAX6738XKMD3-T MAX6738XKMD7-T MAX6738XKRD3-T MAX6738XKRD7-T MAX6738XKSD3-T MAX6738XKSD7-T MAX6738XKTD3-T MAX6738XKTD7-T MAX6738XKVD3-T MAX6738XKVD7-T MAX6738XKWD3-T MAX6738XKWD7-T MAX6738XKYD3-T MAX6738XKYD7-T MAX6738XKZD3-T MAX6738XKZD7-T MAX6739XKLD3-T MAX6739XKLD7-T MAX6739XKMD3-T MAX6739XKMD7-T MAX6739XKRD3-T MAX6739XKRD7-T MAX6739XKSD3-T MAX6739XKSD7-T MAX6739XKTD3-T MAX6739XKTD7-T MAX6739XKVD3-T MAX6739XKVD7-T MAX6739XKWD3-T MAX6739XKWD7-T MAX6741XKR MAX6741XKS MAX6741XKT MAX6741XKV MAX6741XKW MAX6741XKY MAX6741XKZ MAX6742XKLD3-T MAX6742XKLD7-T MAX6742XKMD3-T MAX6742XKMD7-T MAX6742XKRD3-T MAX6742XKRD7-T MAX6742XKSD3-T MAX6742XKSD7-T MAX6742XKTD3-T MAX6742XKTD7-T MAX6742XKVD3-T MAX6
OCR Text	...book Computers Controllers PDAs gps Equipment POS Equipment Ordering Information continued at end of data sheet. Selector Guide continued at end of data sheet. Pin Configurations appear at end of data sheet. Typical Application Circuits ...
Description	Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits (MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5 Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
File Size	233.66K / 16 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF9100R3 MRF9100 MRF9100SR3
OCR Text	... both on input and output. P1dB gps 100 16 110 17 -- -- W dB 47 51 -- % IRL -- -- IMD -- -- -20 -30 -10 -- -- dB dBc No Degradation In Output Power Before and After Test MRF9100 MRF9100R3 MRF9100SR3 2 MOTO...
Description	GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
File Size	390.38K / 12 Page	View it Online	Download Datasheet

				ZARLINK[Zarlink Semiconductor Inc]
Part No.	NJ8821 NJ8821BADP NJ8821BAMP NJ8821MADG
OCR Text	...siser circuit fabricated on the gps CMOS process and is capable of achieving high sideband attenuation and low noise performance. It contains a reference oscillator, 11-bit programmable reference divider, digital and sample-and-hold compara...
Description	FREQUENCY SYNTHESISER (MICROPROCESSOR INTERFACE) WITH RESETTABLE COUNTERS
File Size	370.17K / 10 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	...otherwise indicated. Symbol gps P-1dB h Y Min 11.0 30 45 -- Typ 13.0 -- 48 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10021 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol ...
Description	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10043
OCR Text	...otherwise indicated. Symbol gps p-1dB hD Y Min 11 12 40 -- Typ 12 14 45 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10043 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(...
Description	12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 1.9.0 GHz GOLDMOS Field Effect Transistor
File Size	234.06K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10052
OCR Text	...otherwise indicated. Symbol gps P-1dB h Y Min 12.0 35 50 -- Typ 13.5 -- 55 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10052 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol ...
Description	35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
File Size	497.70K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	...otherwise indicated. Symbol gps P-1dB hD Y Min 10 12 40 -- Typ 12 -- -- -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10053 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Volt...
Description	12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10111
OCR Text	...t frequency of test) Symbol gps P-1dB hD Y Min 15.0 6 45 -- Typ 16 7 50 -- Max -- -- -- 30:1 Units dB Watts % -- Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 90 14 80 Gain 70 60 11 50...
Description	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
File Size	336.82K / 6 Page	View it Online	Download Datasheet

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