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  e-phemt Datasheet PDF File

For e-phemt Found Datasheets File :: 2758    Search Time::1.937ms    
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    D10040230PL1

RF Micro Devices
Part No. D10040230PL1
OCR Text ....DataSheet4U.com 123 5 7 89 E J S T P K C M R O Q oG N D H L B All Dimensions in mm: F A B nominal 44,6 0,2 13,6 0,2 20,4 0,5 8 0,15 12,6 0,15 38,1 0,2 4 +0,2 / -0,05 4 0,2 25,4 0,2 UNC 6-32 4,2 0,2 27,2 0,2 11,6...
Description 45-1000MHz GaAs/GaN PWR DBLR HYBRID

File Size 126.18K  /  4 Page

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    Conexant Systems, Inc.
Part No. QLNA4S.01R
OCR Text ...erse isolation 30 40 db nf(no t e 1) no i s e f i gure 2.5 3 . 5 d b (note 1) these measurements will be carried out on a sampled b...phemt products will be supplied upon user?s request . in addition to inspection criteria it will con...
Description Q Band Low Noise Amplifier(工作频率0GHz6GHz的低噪声Q波段功率放大

File Size 42.35K  /  2 Page

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    RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM1555C1H180GB01D GJM1555C1H1R8BB01D GJM1555C1H1R5BB01D S680-338 RJ2GE0R

Freescale Semiconductor, Inc
Part No. RC0402FR-07220RL MMG20271HT1 GRM155R61A104K01D GJM1555C1H180GB01D GJM1555C1H1R8BB01D GJM1555C1H1R5BB01D S680-338 RJ2GE0R00X
OCR Text e-phemt) High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other s...
Description Enhancement Mode pHEMT Technology (e-phemt) High Linearity Amplifier

File Size 545.34K  /  18 Page

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    LX5552 LX5552LU

Microsemi Corporation
Part No. LX5552 LX5552LU
OCR Text ...h electron mobility transistor (e-phemt) technology, and a low-cost Depletion mode pHEMT (D-pHEMT) single pole double throw (SPDT) antenna switch in a single package. The Tx path of LX5552 features a two-stage monolithic microwave integrate...
Description 2.4-2.5 GHz Front-End Module with Internally Matched Power Amplifier, LNA & SPDT Switch

File Size 85.28K  /  3 Page

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    0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA93D MMG15241HT1 GJM1555C1HR70BB01D GJM1555C1H5R6DB01D GJM1555C1H1R5CB01

Freescale Semiconductor, Inc
Part No. 0603CS-30NXJLW GJM1555C1HR80BB01D GRM188R71H104KA93D MMG15241HT1 GJM1555C1HR70BB01D GJM1555C1H5R6DB01D GJM1555C1H1R5CB01D IS680-338 GRM188RC1H560GA01D
OCR Text e-phemt) High Linearity Amplifier The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other...
Description Enhancement Mode pHEMT Technology (e-phemt)

File Size 759.51K  /  18 Page

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    SPF-5043Z-EVB1 SPF-5043Z

RF Micro Devices
Part No. SPF-5043Z-EVB1 SPF-5043Z
OCR Text ... G a in & N F ve rsu s F re q u e n c y B ro a d b a n d A p p lic a tio n C irc u it (5 V , 4 6 m A ) 4 .0 3 .5 3 .0 2 .5 2 .0 1 .5 1 .0 Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Applications Cellular, PCS, W-...
Description 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER

File Size 589.19K  /  12 Page

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    HMC593LP309

Hittite Microwave Corporation
Part No. HMC593LP309
OCR Text ...unctional diagram the hmc593lp3(e) is a versatile, high dynamic range gaas mmic low noise amplifi er that integrates a low loss lna bypass...phemt mmic low noise amplifier w/ bypass mode, 3.3 - 3.8 ghz lna broadband gain & return loss @ ...
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz

File Size 287.03K  /  8 Page

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    HM69SPDT312 HS69SPDT312

Sumitomo Electric Industries, Ltd.
Eudyna Devices Inc
Part No. HM69SPDT312 HS69SPDT312
OCR Text ...ion Symbol A A1 A2 A3 b D D1 D2 E E1 E2 e L Min 0.00 0.18 1.15 1.15 0.50 Measurement (mm) Nom 0.85 0.01 0.65 0.20 REF 0.23 3.00 BSC 2.75 BSC 1.30 3.00 BSC 2.75 BSC 1.30 0.50 BSC 0.60 Max 0.90 0.05 0.70 0.30 1.45 1.45 0.75 Rev 0....
Description Single Pole Double Throw GaAs PHEMT Switch 0.1 6 GHz 单刀双掷开关GaAs PHEMT.16千兆
Single Pole Double Throw GaAs PHEMT Switch 0.1 ?6 GHz
Single Pole Double Throw GaAs PHEMT Switch 0.1 - 6 GHz

File Size 133.29K  /  4 Page

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    FPD750-000 FPD750-000S3 FPD750-000SQ

RF Micro Devices
Part No. FPD750-000 FPD750-000S3 FPD750-000SQ
OCR Text ...pper-based photolithography. th e double recessed gate structure mini- mizes parasitics to optimize performanc e. the epitaxial structure and processing have been optimized for reliable high-p ower applications. the fpd750 also fea- tures s...
Description 0.5W POWER pHEMT

File Size 232.97K  /  4 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TQPHT
OCR Text ...optical lithography in place of e-beam and adds TriQuint's unique thick metal scheme. This process is targeted for high efficiency and linea...pHEMT with a -0.8 V pinch off. The three metal interconnecting layers are encapsulated in a high per...
Description 0.5 um pHEMT Foundry Service

File Size 204.87K  /  5 Page

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