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compound Datasheet PDF File

For compound Found Datasheets File :: 13010 Search Time::1.531ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX1N40
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 5 UNIT K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL V(BR)DSS V(BR)DSS / Tj RDS(ON) VGS(TO) gfs IDSS IGSS Qg(tot) Qgs Qgd td(on) tr td(off) tf L...
Description	PowerMOS transistor
File Size	55.77K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX2N50E
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 5 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage tempe...
Description	PowerMOS transistors Avalanche energy rated
File Size	77.30K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX2N60E
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 5 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage tempe...
Description	PowerMOS transistors Avalanche energy rated
File Size	59.99K / 8 Page	View it Online	Download Datasheet

				DYNEX SEMICONDUCTOR LTD
Part No.	MP02HBT190-14
OCR Text	...ting torque = 6nm with mounting compound 3 phase halfwave dc commoned terminals to base plate ac rms, 1min, 50hz max. rate of rise of on-state current v t(to) threshold voltage v from 67% v drm to 400a repetitive 50hz gate source 20v, ...
Description	300 A, 1400 V, SCR
File Size	101.66K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX3N40E
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 5 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage tempe...
Description	PowerMOS transistors Avalanche energy rated
File Size	58.79K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX3N50E
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 4.1 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage tem...
Description	PowerMOS transistors Avalanche energy rated
File Size	71.97K / 8 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	MMST2907A-7-F MMST2907A1 MMST2907A
OCR Text	...Molded Plastic, "Green" Molding compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating...
Description	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	72.38K / 4 Page	View it Online	Download Datasheet

				http:// DIODES[Diodes Incorporated]
Part No.	MMST2222A-7-F MMST2222A1 MMST2222A
OCR Text	...Molded Plastic, "Green" Molding compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over A...
Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size	70.37K / 4 Page	View it Online	Download Datasheet

				Maxim Integrated Produc... MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
Part No.	32TSOP
OCR Text	...: Package Type: Body Size: Mold compound: Lead Frame: Lead Finsh: Die Attach: Bond Wire / Size: Flammability: Theta JA: Theta JC: Moisture Sensitivity (JEDEC J-STD20A) Date Code Range: PACKAGE TESTS DESCRIPTION SOLDERABILITY DATE CODE CON...
Description	PACKAGE RELIABILITY REPORT
File Size	32.75K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX3N60E
OCR Text	...mbient CONDITIONS with heatsink compound MIN. TYP. MAX. UNIT 55 4.1 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER Drain-source breakdown voltage V(BR)DSS / Drain-source breakdown Tj voltage tem...
Description	PowerMOS transistors Avalanche energy rated
File Size	73.25K / 8 Page	View it Online	Download Datasheet

For compound Found Datasheets File :: 13010 Search Time::1.531ms
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